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dc.contributor.authorWijeyasinghe, Nilushi
dc.contributor.authorTsetseris, Leonidas
dc.contributor.authorRegoutz, Anna
dc.contributor.authorSit, Wai-Yu
dc.contributor.authorFei, Zhuping
dc.contributor.authorDu, Tian
dc.contributor.authorWang, Xuhua
dc.contributor.authorMcLachlan, Martyn A.
dc.contributor.authorVourlias, George
dc.contributor.authorPatsalas, Panos A.
dc.contributor.authorPayne, David J.
dc.contributor.authorHeeney, Martin
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2018-02-04T10:57:59Z
dc.date.available2018-02-04T10:57:59Z
dc.date.issued2018-02-01
dc.identifier.citationWijeyasinghe N, Tsetseris L, Regoutz A, Sit W-Y, Fei Z, et al. (2018) Copper (I) Selenocyanate (CuSeCN) as a Novel Hole-Transport Layer for Transistors, Organic Solar Cells, and Light-Emitting Diodes. Advanced Functional Materials: 1707319. Available: http://dx.doi.org/10.1002/adfm.201707319.
dc.identifier.issn1616-301X
dc.identifier.doi10.1002/adfm.201707319
dc.identifier.urihttp://hdl.handle.net/10754/627032
dc.description.abstractThe synthesis and characterization of copper (I) selenocyanate (CuSeCN) and its application as a solution-processable hole-transport layer (HTL) material in transistors, organic light-emitting diodes, and solar cells are reported. Density-functional theory calculations combined with X-ray photoelectron spectroscopy are used to elucidate the electronic band structure, density of states, and microstructure of CuSeCN. Solution-processed layers are found to be nanocrystalline and optically transparent (>94%), due to the large bandgap of ≥3.1 eV, with a valence band maximum located at −5.1 eV. Hole-transport analysis performed using field-effect measurements confirms the p-type character of CuSeCN yielding a hole mobility of 0.002 cm2 V−1 s−1. When CuSeCN is incorporated as the HTL material in organic light-emitting diodes and organic solar cells, the resulting devices exhibit comparable or improved performance to control devices based on commercially available poly(3,4-ethylenedioxythiophene):polystyrene sulfonate as the HTL. This is the first report on the semiconducting character of CuSeCN and it highlights the tremendous potential for further developments in the area of metal pseudohalides.
dc.description.sponsorshipN.W. and T.D.A. acknowledge financial support from the European Research Council (ERC) AMPRO (Grant No. 280221) and the Engineering and Physical Sciences Research Council (EPSRC) (Grant No. EP/L504786/1). N.W. and T.D.A are also grateful to Prof. Jenny Nelson for constructive discussions and to Prof. James R. Durrant for supplying the PCDTBT polymer. L.T. acknowledges support for the computational time granted from the Greek Research & Technology Network (GRNET) in the National HPC facility—ARIS—under project pr004034-STEM. D.J.P. acknowledges support from the Royal Society for his University Research Fellowship (Grant Nos. UF100105 and UF150693). D.J.P. and A.R. acknowledge support from the EPSRC (Grant Nos. EP/M013839/1 and EP/M028291/1).
dc.publisherWiley-Blackwell
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adfm.201707319/full
dc.rightsThis is the peer reviewed version of the following article: Copper (I) Selenocyanate (CuSeCN) as a Novel Hole-Transport Layer for Transistors, Organic Solar Cells, and Light-Emitting Diodes, which has been published in final form at http://doi.org/10.1002/adfm.201707319. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
dc.titleCopper (I) Selenocyanate (CuSeCN) as a Novel Hole-Transport Layer for Transistors, Organic Solar Cells, and Light-Emitting Diodes
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalAdvanced Functional Materials
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Physics and the Centre for Plastic Electronics; Imperial College London; London SW7 2AZ UK
dc.contributor.institutionDepartment of Physics; National Technical University of Athens; Athens GR-15780 Greece
dc.contributor.institutionDepartment of Materials and the Centre for Plastic Electronics; Imperial College London; Royal School of Mines; London SW7 2AZ UK
dc.contributor.institutionDepartment of Chemistry and the Centre for Plastic Electronics; Imperial College London; London SW7 2AZ UK
dc.contributor.institutionDepartment of Physics; Laboratory of Applied Physics; Aristotle University of Thessaloniki; Thessaloniki 54124 Greece
kaust.personAnthopoulos, Thomas D.


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