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dc.contributor.authorBose, Riya
dc.contributor.authorAdhikari, Aniruddha
dc.contributor.authorBurlakov, Victor M
dc.contributor.authorLiu, Guangyu
dc.contributor.authorHaque, Mohammed
dc.contributor.authorPriante, Davide
dc.contributor.authorHedhili, Mohamed N.
dc.contributor.authorWehbe, Nimer
dc.contributor.authorZhao, Chao
dc.contributor.authorYang, Haoze
dc.contributor.authorNg, Tien Khee
dc.contributor.authorGoriely, Alain
dc.contributor.authorBakr, Osman
dc.contributor.authorWu, Tao
dc.contributor.authorOoi, Boon S.
dc.contributor.authorMohammed, Omar F.
dc.date.accessioned2018-02-01T11:45:54Z
dc.date.available2018-02-01T11:45:54Z
dc.date.issued2018-01-30
dc.identifier.citationBose R, Adhikari A, Burlakov VM, Liu G, Haque MA, et al. (2018) Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy. ACS Energy Letters: 476–481. Available: http://dx.doi.org/10.1021/acsenergylett.7b01330.
dc.identifier.issn2380-8195
dc.identifier.issn2380-8195
dc.identifier.doi10.1021/acsenergylett.7b01330
dc.identifier.urihttp://hdl.handle.net/10754/627010
dc.description.abstractIntroducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.
dc.description.sponsorshipThe work reported here was supported by King Abdullah University of Science and Technology (KAUST).
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/10.1021/acsenergylett.7b01330
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Energy Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/acsenergylett.7b01330.
dc.titleImaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy
dc.typeArticle
dc.contributor.departmentChemical Science Program
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentKAUST Catalysis Center (KCC)
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentSurface Science
dc.identifier.journalACS Energy Letters
dc.eprint.versionPost-print
dc.contributor.institutionMathematical Institute, University of Oxford, Woodstock Road, Oxford OX2 6GG, UK
kaust.personBose, Riya
kaust.personAdhikari, Aniruddha
kaust.personLiu, Guangyu
kaust.personHaque, Mohammed
kaust.personPriante, Davide
kaust.personHedhili, Mohamed N.
kaust.personWehbe, Nimer
kaust.personZhao, Chao
kaust.personYang, Haoze
kaust.personNg, Tien Khee
kaust.personBakr, Osman M.
kaust.personWu, Tao
kaust.personOoi, Boon S.
kaust.personMohammed, Omar F.
dc.date.published-online2018-01-30
dc.date.published-print2018-02-09


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