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    Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy

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    acsenergylett.7b01330.pdf
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    Type
    Article
    Authors
    Bose, Riya
    Adhikari, Aniruddha cc
    Burlakov, Victor M
    Liu, Guangyu cc
    Haque, Mohammed
    Priante, Davide cc
    Hedhili, Mohamed N. cc
    Wehbe, Nimer
    Zhao, Chao cc
    Yang, Haoze cc
    Ng, Tien Khee cc
    Goriely, Alain cc
    Bakr, Osman cc
    Wu, Tao cc
    Ooi, Boon S. cc
    Mohammed, Omar F. cc
    KAUST Department
    Chemical Science Program
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Functional Nanomaterials Lab (FuNL)
    Imaging and Characterization Core Lab
    KAUST Catalysis Center (KCC)
    KAUST Solar Center (KSC)
    Laboratory of Nano Oxides for Sustainable Energy
    Material Science and Engineering Program
    Photonics Laboratory
    Physical Science and Engineering (PSE) Division
    Surface Science
    Ultrafast Laser Spectroscopy and Four-dimensional Electron Imaging Research Group
    Date
    2018-01-30
    Online Publication Date
    2018-01-30
    Print Publication Date
    2018-02-09
    Permanent link to this record
    http://hdl.handle.net/10754/627010
    
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    Abstract
    Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.
    Citation
    Bose R, Adhikari A, Burlakov VM, Liu G, Haque MA, et al. (2018) Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy. ACS Energy Letters: 476–481. Available: http://dx.doi.org/10.1021/acsenergylett.7b01330.
    Sponsors
    The work reported here was supported by King Abdullah University of Science and Technology (KAUST).
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Energy Letters
    DOI
    10.1021/acsenergylett.7b01330
    Additional Links
    http://pubs.acs.org/doi/10.1021/acsenergylett.7b01330
    ae974a485f413a2113503eed53cd6c53
    10.1021/acsenergylett.7b01330
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Chemical Science Program; Material Science and Engineering Program; Photonics Laboratory; KAUST Catalysis Center (KCC); KAUST Solar Center (KSC); Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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