Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy
Type
ArticleAuthors
Bose, RiyaAdhikari, Aniruddha

Burlakov, Victor M
Liu, Guangyu

Haque, Mohammed
Priante, Davide

Hedhili, Mohamed N.

Wehbe, Nimer
Zhao, Chao

Yang, Haoze

Ng, Tien Khee

Goriely, Alain

Bakr, Osman

Wu, Tao

Ooi, Boon S.

Mohammed, Omar F.

KAUST Department
Chemical Science ProgramComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Functional Nanomaterials Lab (FuNL)
Imaging and Characterization Core Lab
KAUST Catalysis Center (KCC)
KAUST Solar Center (KSC)
Laboratory of Nano Oxides for Sustainable Energy
Material Science and Engineering Program
Photonics Laboratory
Physical Science and Engineering (PSE) Division
Surface Science
Ultrafast Laser Spectroscopy and Four-dimensional Electron Imaging Research Group
Date
2018-01-30Online Publication Date
2018-01-30Print Publication Date
2018-02-09Permanent link to this record
http://hdl.handle.net/10754/627010
Metadata
Show full item recordAbstract
Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.Citation
Bose R, Adhikari A, Burlakov VM, Liu G, Haque MA, et al. (2018) Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy. ACS Energy Letters: 476–481. Available: http://dx.doi.org/10.1021/acsenergylett.7b01330.Sponsors
The work reported here was supported by King Abdullah University of Science and Technology (KAUST).Publisher
American Chemical Society (ACS)Journal
ACS Energy LettersAdditional Links
http://pubs.acs.org/doi/10.1021/acsenergylett.7b01330ae974a485f413a2113503eed53cd6c53
10.1021/acsenergylett.7b01330