Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions
Muller, David A.
MetadataShow full item record
AbstractMonolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p–n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2–MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2–MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2–MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.
CitationZhang C, Li M-Y, Tersoff J, Han Y, Su Y, et al. (2018) Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions. Nature Nanotechnology. Available: http://dx.doi.org/10.1038/s41565-017-0022-x.
SponsorsThis research was supported with grants from the Welch Foundation (F-1672), the US National Science Foundation (NSF) (DMR-1306878, EFMA-1542747) and the Materials Research Science and Engineering Center (DMR-1720595). L.J.L. acknowledges support from KAUST (Saudi Arabia), MOST and TCECM, Academia Sinica (Taiwan) and AOARD FA23861510001 (USA). C.Z acknowledges support from the National Natural Science Foundation of China (Grant No. 11774268). Y.S.S acknowledges support from the Yan Jici Talent Students Program. This work made use of the electron microscopy facility of the Cornell Center for Materials Research with support from the NSF (DMR-1719875 and DMR-1429155).
- NANOELECTRONICS. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface.
- Authors: Li MY, Shi Y, Cheng CC, Lu LS, Lin YC, Tang HL, Tsai ML, Chu CW, Wei KH, He JH, Chang WH, Suenaga K, Li LJ
- Issue date: 2015 Jul 31
- Enhanced Performance of a Monolayer MoS<sub>2</sub>/WSe<sub>2</sub> Heterojunction as a Photoelectrochemical Cathode.
- Authors: Xiao J, Zhang Y, Chen H, Xu N, Deng S
- Issue date: 2018
- Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application.
- Authors: Nourbakhsh A, Zubair A, Dresselhaus MS, Palacios T
- Issue date: 2016 Feb 10
- Disparity in Photoexcitation Dynamics between Vertical and Lateral MoS<sub>2</sub>/WSe<sub>2</sub> Heterojunctions: Time-Domain Simulation Emphasizes the Importance of Donor-Acceptor Interaction and Band Alignment.
- Authors: Yang Y, Fang WH, Long R
- Issue date: 2017 Dec 7
- Visualizing band offsets and edge states in bilayer-monolayer transition metal dichalcogenides lateral heterojunction.
- Authors: Zhang C, Chen Y, Huang JK, Wu X, Li LJ, Yao W, Tersoff J, Shih CK
- Issue date: 2016 Jan 18