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dc.contributor.authorChavali, Raghu V. K.
dc.contributor.authorDe Wolf, Stefaan
dc.contributor.authorAlam, Muhammad A.
dc.date.accessioned2018-02-01T07:24:59Z
dc.date.available2018-02-01T07:24:59Z
dc.date.issued2018-01-15
dc.identifier.citationChavali RVK, De Wolf S, Alam MA (2018) Device physics underlying silicon heterojunction and passivating-contact solar cells: A topical review. Progress in Photovoltaics: Research and Applications. Available: http://dx.doi.org/10.1002/pip.2959.
dc.identifier.issn1062-7995
dc.identifier.doi10.1002/pip.2959
dc.identifier.urihttp://hdl.handle.net/10754/626965
dc.description.abstractThe device physics of commercially dominant diffused-junction silicon solar cells is well understood, allowing sophisticated optimization of this class of devices. Recently, so-called passivating-contact solar cell technologies have become prominent, with Kaneka setting the world's silicon solar cell efficiency record of 26.63% using silicon heterojunction contacts in an interdigitated configuration. Although passivating-contact solar cells are remarkably efficient, their underlying device physics is not yet completely understood, not in the least because they are constructed from diverse materials that may introduce electronic barriers in the current flow. To bridge this gap in understanding, we explore the device physics of passivating contact silicon heterojunction (SHJ) solar cells. Here, we identify the key properties of heterojunctions that affect cell efficiency, analyze the dependence of key heterojunction properties on carrier transport under light and dark conditions, provide a self-consistent multiprobe approach to extract heterojunction parameters using several characterization techniques (including dark J-V, light J-V, C-V, admittance spectroscopy, and Suns-Voc), propose design guidelines to address bottlenecks in energy production in SHJ cells, and develop a process-to-module modeling framework to establish the module's performance limits. We expect that our proposed guidelines resulting from this multiscale and self-consistent framework will improve the performance of future SHJ cells as well as other passivating contact-based solar cells.
dc.description.sponsorshipThe authors wish to thank fruitful discussions with Prof Jeffery Gray, Prof Peter Bermel, and Prof Mark Lundstrom at Purdue University. This paper is based upon work supported in part under the US-India Partnership to Advance Clean Energy-Research (PACE-R) for the Solar Energy Research Institute for India and the United States (SERIIUS), funded jointly by the U.S. Department of Energy (Office of Science, Office of Basic Energy Sciences, and Energy Efficiency and Renewable Energy, Solar Energy Technology Program, under subcontract DE-AC36-08GO28308 to the National Renewable Energy Laboratory, Golden, Colorado) and the Government of India, through the Department of Science and Technology under subcontract IUSSTF/JCERDC-SERIIUS/2012 dated November 22, 2012.
dc.publisherWiley-Blackwell
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pip.2959/full
dc.subjectamorphous semiconductors
dc.subjectcurrent-voltage characteristics
dc.subjectheterojunctions
dc.subjectpassivating contacts
dc.subjectprocess control
dc.subjectsilicon
dc.subjectmodeling and simulation
dc.titleDevice physics underlying silicon heterojunction and passivating-contact solar cells: A topical review
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalProgress in Photovoltaics: Research and Applications
dc.contributor.institutionSchool of Electrical and Computer Engineering; Purdue University; West Lafayette IN USA
kaust.personDe Wolf, Stefaan


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