Interfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayers
KAUST DepartmentImaging and Characterization Core Lab
Material Science and Engineering Program
Nanofabrication Core Lab
Physical Science and Engineering (PSE) Division
Thin Films & Characterization
Online Publication Date2017-12-26
Print Publication Date2018-05
Permanent link to this recordhttp://hdl.handle.net/10754/626869
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AbstractThe effect of interfacial scattering on anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE) was studied in the (Ta12n/Fe36n)n multilayers, where the numbers give the thickness in nanometer and n is an integer from 1 to 12. The multilayer structure has been confirmed by the XRR spectra and STEM images of cross-sections. The magneto-transport properties were measured by four-point probe method in Hall bar shaped samples in the temperature range of 5 - 300 K. The AMR increases with n, which could be ascribed to the interfacial spin-orbit scattering. At 5 K, the longitudinal resistivity (ρ) increases by 6.4 times and the anomalous Hall resistivity (ρ) increases by 49.4 times from n =1 to n =12, indicative of the interfacial scattering effect. The skew-scattering, side-jump and intrinsic contributions to the AHE were separated successfully. As n increases from 1 to 12, the intrinsic contribution decreases because of the decaying crystallinity or finite size effect and the intrinsic contribution dominated the AHE for all samples. The side jump changes from negative to positive because the interfacial scattering and intralayer scattering in Fe layers both contribute to side jump in the AHE but with opposite sign.
CitationZhang Q, Zhang J, Zhao Y, Wen Y, Li P, et al. (2018) Interfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayers. AIP Advances 8: 055813. Available: http://dx.doi.org/10.1063/1.5006355.
SponsorsThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). QZ and PL acknowledge the financial support by KAUST sensor project (REP/1/2708-01). XH acknowledges the financial support by KAUST sensor project (REP/1/2719-01).
Except where otherwise noted, this item's license is described as All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/1.5006355
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