Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Grant NumberGEN/1/4014-01-01
Permanent link to this recordhttp://hdl.handle.net/10754/626865
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AbstractThe Silicon-based solar cell is one of the most important enablers toward high efficiency and low-cost clean energy resource. Metallization of silicon-based solar cells typically utilizes screen printed silver-Aluminium (Ag-Al) which affects the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used as an alternative candidate only to the front contact grid lines in crystalline silicon (c-Si) based solar cells. In this paper, we investigate the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2% compared to Ag-Al. This is attributed to the improvement of the parasitic resistance in which the series resistance decreased by 0.737 Ω.cm². Further, we complement experimental observation with a simulation of different contact resistance values, which manifests NiSi/Cu-Al rear contact as a promising low-cost metallization for c-Si solar cells with enhanced efficiency.
CitationBahabry RR, Hanna AN, Kutbee AT, Gumus A, Hussain MM (2018) Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells. Energy Technology. Available: http://dx.doi.org/10.1002/ente.201700790.
SponsorsThis publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Technology Transfer Office under Award No. GEN/1/4014-01-01.