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dc.contributor.authorPaterson, Alexandra
dc.contributor.authorLin, Yen-Hung
dc.contributor.authorMottram, Alexander D.
dc.contributor.authorFei, Zhuping
dc.contributor.authorNiazi, Muhammad Rizwan
dc.contributor.authorKirmani, Ahmad R.
dc.contributor.authorAmassian, Aram
dc.contributor.authorSolomeshch, Olga
dc.contributor.authorTessler, Nir
dc.contributor.authorHeeney, Martin
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2018-01-11T09:20:50Z
dc.date.available2018-01-11T09:20:50Z
dc.date.issued2017-12-27
dc.identifier.citationPaterson AF, Lin Y-H, Mottram AD, Fei Z, Niazi MR, et al. (2017) The Impact of Molecular p-Doping on Charge Transport in High-Mobility Small-Molecule/Polymer Blend Organic Transistors. Advanced Electronic Materials: 1700464. Available: http://dx.doi.org/10.1002/aelm.201700464.
dc.identifier.issn2199-160X
dc.identifier.doi10.1002/aelm.201700464
dc.identifier.urihttp://hdl.handle.net/10754/626740
dc.description.abstractMolecular doping is a powerful tool with the potential to resolve many of the issues currently preventing organic thin-film transistor (OTFT) commercialization. However, the addition of dopant molecules into organic semiconductors often disrupts the host lattice, introducing defects and harming electrical transport. New dopant-based systems that overcome practical utilization issues, while still reaping the electrical performance benefits, would therefore be extremely valuable. Here, the impact of p-doping on the charge transport in blends consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT), and the molecular dopant C60F48 is investigated. Electrical field-effect measurements indicate that p-doping not only enhances the average saturation mobility from 1.4 to 7.8 cm2 V−1 s−1 over 50 devices (maximum values from around 4 to 13 cm2 V−1 s−1), but also improves bias–stress stability, contact resistance, threshold voltage, and the overall device-to-device performance variation. Importantly, materials characterization using X-ray diffraction, X-ray photoemission spectroscopy, and ultraviolet photoemission spectroscopy, combined with charge transport modeling, reveal that effective doping is achieved without perturbing the microstructure of the polycrystalline semiconductor film. This work highlights the remarkable potential of ternary organic blends as a simple platform for OTFTs to achieve all the benefits of doping, with none of the drawbacks.
dc.description.sponsorshipT.D.A. and A.F.P acknowledge financial support from Cambridge Display Technology (Company No. 2672530). O.S. acknowledges the support of the Center for Absorption in Science of the Ministry of Immigrant Absorption under the framework of the KAMEA Program.
dc.publisherWiley
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/aelm.201700464/full
dc.rightsThis is the peer reviewed version of the following article: The Impact of Molecular p-Doping on Charge Transport in High-Mobility Small-Molecule/Polymer Blend Organic Transistors, which has been published in final form at http://doi.org/10.1002/aelm.201700464. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
dc.titleThe Impact of Molecular p-Doping on Charge Transport in High-Mobility Small-Molecule/Polymer Blend Organic Transistors
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Electronic Materials
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics; Imperial College London; South Kensington London SW7 2AZ UK
dc.contributor.institutionDepartment of Materials Science and Engineering; School of Molecular Science and Engineer; Vidyasirimedhi Institute of Science and Technology (VISTEC); Rayong 21210 Thailand
dc.contributor.institutionDepartment of Chemistry and Centre for Plastic Electronics; Imperial College London; South Kensington London SW7 2AZ UK
dc.contributor.institutionSara and Moshe Zisapel Nano-Electronic Center; Department of Electrical Engineering; Technion - Israel Institute of Technology; Haifa 3200 Israel
kaust.personPaterson, Alexandra
kaust.personNiazi, Muhammad Rizwan
kaust.personKirmani, Ahmad R.
kaust.personAmassian, Aram
kaust.personAnthopoulos, Thomas D.
dc.date.published-online2017-12-27
dc.date.published-print2018-10


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