Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs
AuthorsMughal, Asad J.
Young, Erin C.
Alhassan, Abdullah I.
Speck, James S.
DenBaars, Steven P.
Online Publication Date2017-11-27
Print Publication Date2017-12-01
Permanent link to this recordhttp://hdl.handle.net/10754/626722
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AbstractImproved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.
CitationMughal AJ, Young EC, Alhassan AI, Back J, Nakamura S, et al. (2017) Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs. Applied Physics Express 10: 121006. Available: http://dx.doi.org/10.7567/apex.10.121006.
SponsorsThis work was funded in part by the Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and University of California, Santa Barbara (UCSB). The work was also funded in part through the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, with support from the NSF NNIN network (ECS-03357650), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053).
JournalApplied Physics Express