Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition
Mughal, Asad J.
Wong, Matthew S.
Alhassan, Abdullah I.
DenBaars, Steven P.
Permanent link to this recordhttp://hdl.handle.net/10754/626713
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AbstractMicro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10−5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.
CitationHwang D, Mughal AJ, Wong MS, Alhassan AI, Nakamura S, et al. (2017) Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition. Applied Physics Express 11: 012102. Available: http://dx.doi.org/10.7567/apex.11.012102.
SponsorsThis work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. A portion of this work was carried out in the UCSB nanofabrication facility, which is part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the MRSEC Program of the National Science Foundation under Award No. DMR 1121053. D.H. was supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1144085. The authors would like to acknowledge Dr. Tom Mates for his assistance with SIMS.
PublisherJapan Society of Applied Physics
JournalApplied Physics Express