Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers
dc.contributor.author | Foronda, Humberto M. | |
dc.contributor.author | Wu, Feng | |
dc.contributor.author | Zollner, Christian | |
dc.contributor.author | Alif, Muhammad Esmed | |
dc.contributor.author | Saifaddin, Burhan | |
dc.contributor.author | Almogbel, Abdullah | |
dc.contributor.author | Iza, Michael | |
dc.contributor.author | Nakamura, Shuji | |
dc.contributor.author | DenBaars, Steven P. | |
dc.contributor.author | Speck, James S. | |
dc.date.accessioned | 2018-01-04T07:51:41Z | |
dc.date.available | 2018-01-04T07:51:41Z | |
dc.date.issued | 2017-11-23 | |
dc.identifier.citation | Foronda HM, Wu F, Zollner C, Alif ME, Saifaddin B, et al. (2018) Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers. Journal of Crystal Growth 483: 134–139. Available: http://dx.doi.org/10.1016/j.jcrysgro.2017.11.027. | |
dc.identifier.issn | 0022-0248 | |
dc.identifier.doi | 10.1016/j.jcrysgro.2017.11.027 | |
dc.identifier.uri | http://hdl.handle.net/10754/626711 | |
dc.description.abstract | In this work, reduced threading dislocation density AlN on (0 0 0 1) 6H-SiC was realized through the use of reduced temperature AlN interlayers in the metalorganic chemical vapor deposition growth. We explored the dependence of the interlayer growth temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth resulted in a threading dislocation density of 7 × 108 cm−2 indicating a significant reduction in the defect density of AlN in comparison to direct growth of AlN on SiC (∼1010 cm−2). Atomic force microscopy images demonstrated a clear step-terrace morphology that is consistent with step flow growth at high temperature. Reducing the interlayer growth temperature increased the TD inclination and thus enhanced TD-TD interactions. The TDD was decreased via fusion and annihilation reactions. | |
dc.description.sponsorship | This work was supported by the King Abdulaziz Center for Science and Technology and King Abdulaziz University of Science and Technology (KACST/KAUST) as well as the Materials Research Laboratory and California Nanosystems Institute at UC Santa Barbara. We would like to thank them for providing access and training to their laboratories. | |
dc.publisher | Elsevier BV | |
dc.subject | Metalorganic chemical vapor deposition (A3) | |
dc.subject | Transmission electron microscopy (A1) | |
dc.subject | X-ray diffraction (A1) | |
dc.subject | Defect reduction (A1) | |
dc.subject | Nitrides (B1) | |
dc.title | Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers | |
dc.type | Article | |
dc.identifier.journal | Journal of Crystal Growth | |
dc.contributor.institution | Materials Department, University of California, Santa Barbara, CA 93106, USA | |
dc.contributor.institution | Institute of Nano Optoelectronics Research and Technology, University of Science Malaysia, 11800 Penang, Malaysia | |
dc.contributor.institution | Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA | |
dc.date.published-online | 2017-11-23 | |
dc.date.published-print | 2018-02 |