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dc.contributor.authorForonda, Humberto M.
dc.contributor.authorWu, Feng
dc.contributor.authorZollner, Christian
dc.contributor.authorAlif, Muhammad Esmed
dc.contributor.authorSaifaddin, Burhan
dc.contributor.authorAlmogbel, Abdullah
dc.contributor.authorIza, Michael
dc.contributor.authorNakamura, Shuji
dc.contributor.authorDenBaars, Steven P.
dc.contributor.authorSpeck, James S.
dc.date.accessioned2018-01-04T07:51:41Z
dc.date.available2018-01-04T07:51:41Z
dc.date.issued2017-11-23
dc.identifier.citationForonda HM, Wu F, Zollner C, Alif ME, Saifaddin B, et al. (2018) Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers. Journal of Crystal Growth 483: 134–139. Available: http://dx.doi.org/10.1016/j.jcrysgro.2017.11.027.
dc.identifier.issn0022-0248
dc.identifier.doi10.1016/j.jcrysgro.2017.11.027
dc.identifier.urihttp://hdl.handle.net/10754/626711
dc.description.abstractIn this work, reduced threading dislocation density AlN on (0 0 0 1) 6H-SiC was realized through the use of reduced temperature AlN interlayers in the metalorganic chemical vapor deposition growth. We explored the dependence of the interlayer growth temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth resulted in a threading dislocation density of 7 × 108 cm−2 indicating a significant reduction in the defect density of AlN in comparison to direct growth of AlN on SiC (∼1010 cm−2). Atomic force microscopy images demonstrated a clear step-terrace morphology that is consistent with step flow growth at high temperature. Reducing the interlayer growth temperature increased the TD inclination and thus enhanced TD-TD interactions. The TDD was decreased via fusion and annihilation reactions.
dc.description.sponsorshipThis work was supported by the King Abdulaziz Center for Science and Technology and King Abdulaziz University of Science and Technology (KACST/KAUST) as well as the Materials Research Laboratory and California Nanosystems Institute at UC Santa Barbara. We would like to thank them for providing access and training to their laboratories.
dc.publisherElsevier BV
dc.subjectMetalorganic chemical vapor deposition (A3)
dc.subjectTransmission electron microscopy (A1)
dc.subjectX-ray diffraction (A1)
dc.subjectDefect reduction (A1)
dc.subjectNitrides (B1)
dc.titleLow threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers
dc.typeArticle
dc.identifier.journalJournal of Crystal Growth
dc.contributor.institutionMaterials Department, University of California, Santa Barbara, CA 93106, USA
dc.contributor.institutionInstitute of Nano Optoelectronics Research and Technology, University of Science Malaysia, 11800 Penang, Malaysia
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
dc.date.published-online2017-11-23
dc.date.published-print2018-02


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