Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers
Type
ArticleAuthors
Foronda, Humberto M.Wu, Feng
Zollner, Christian
Alif, Muhammad Esmed
Saifaddin, Burhan
Almogbel, Abdullah
Iza, Michael
Nakamura, Shuji
DenBaars, Steven P.
Speck, James S.
Date
2017-11-23Online Publication Date
2017-11-23Print Publication Date
2018-02Permanent link to this record
http://hdl.handle.net/10754/626711
Metadata
Show full item recordAbstract
In this work, reduced threading dislocation density AlN on (0 0 0 1) 6H-SiC was realized through the use of reduced temperature AlN interlayers in the metalorganic chemical vapor deposition growth. We explored the dependence of the interlayer growth temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth resulted in a threading dislocation density of 7 × 108 cm−2 indicating a significant reduction in the defect density of AlN in comparison to direct growth of AlN on SiC (∼1010 cm−2). Atomic force microscopy images demonstrated a clear step-terrace morphology that is consistent with step flow growth at high temperature. Reducing the interlayer growth temperature increased the TD inclination and thus enhanced TD-TD interactions. The TDD was decreased via fusion and annihilation reactions.Citation
Foronda HM, Wu F, Zollner C, Alif ME, Saifaddin B, et al. (2018) Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers. Journal of Crystal Growth 483: 134–139. Available: http://dx.doi.org/10.1016/j.jcrysgro.2017.11.027.Sponsors
This work was supported by the King Abdulaziz Center for Science and Technology and King Abdulaziz University of Science and Technology (KACST/KAUST) as well as the Materials Research Laboratory and California Nanosystems Institute at UC Santa Barbara. We would like to thank them for providing access and training to their laboratories.Publisher
Elsevier BVJournal
Journal of Crystal Growthae974a485f413a2113503eed53cd6c53
10.1016/j.jcrysgro.2017.11.027