Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers
AuthorsForonda, Humberto M.
Alif, Muhammad Esmed
DenBaars, Steven P.
Speck, James S.
Online Publication Date2017-11-23
Print Publication Date2018-02
Permanent link to this recordhttp://hdl.handle.net/10754/626711
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AbstractIn this work, reduced threading dislocation density AlN on (0 0 0 1) 6H-SiC was realized through the use of reduced temperature AlN interlayers in the metalorganic chemical vapor deposition growth. We explored the dependence of the interlayer growth temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth resulted in a threading dislocation density of 7 × 108 cm−2 indicating a significant reduction in the defect density of AlN in comparison to direct growth of AlN on SiC (∼1010 cm−2). Atomic force microscopy images demonstrated a clear step-terrace morphology that is consistent with step flow growth at high temperature. Reducing the interlayer growth temperature increased the TD inclination and thus enhanced TD-TD interactions. The TDD was decreased via fusion and annihilation reactions.
CitationForonda HM, Wu F, Zollner C, Alif ME, Saifaddin B, et al. (2018) Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers. Journal of Crystal Growth 483: 134–139. Available: http://dx.doi.org/10.1016/j.jcrysgro.2017.11.027.
SponsorsThis work was supported by the King Abdulaziz Center for Science and Technology and King Abdulaziz University of Science and Technology (KACST/KAUST) as well as the Materials Research Laboratory and California Nanosystems Institute at UC Santa Barbara. We would like to thank them for providing access and training to their laboratories.
JournalJournal of Crystal Growth