High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum
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AbstractOhmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.
CitationYonkee BP, Young EC, DenBaars SP, Speck JS, Nakamura S (2017) High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum. Semiconductor Science and Technology 33: 015015. Available: http://dx.doi.org/10.1088/1361-6641/aa972c.
SponsorsThe authors would like to thank Kenji Fujito of Mitsubishi Chemical Corporation for providing high-quality free-standing GaN substrates. This work was funded in part by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program, and the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053).