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dc.contributor.authorAli, Haider
dc.contributor.authorYang, Xinbo
dc.contributor.authorWeber, Klaus
dc.contributor.authorSchoenfeld, Winston V.
dc.contributor.authorDavis, Kristopher O.
dc.date.accessioned2018-01-01T12:19:04Z
dc.date.available2018-01-01T12:19:04Z
dc.date.issued2017-08-15
dc.identifier.citationAli H, Yang X, Weber K, Schoenfeld WV, Davis KO (2017) Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells. Microscopy and Microanalysis 23: 900–904. Available: http://dx.doi.org/10.1017/S1431927617012417.
dc.identifier.issn1431-9276
dc.identifier.issn1435-8115
dc.identifier.doi10.1017/S1431927617012417
dc.identifier.urihttp://hdl.handle.net/10754/626630
dc.description.abstractIn this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21.6% obtained on n-type cells, featuring SiO2/TiO2/Al rear contacts and after forming gas annealing (FGA) at 350°C, is due to strong surface passivation of SiO2/TiO2 stack as well as low contact resistivity at the Si/SiO2/TiO2 heterojunction. This can be attributed to the transformation of amorphous TiO2 to a conducting TiO2-x phase. Conversely, the low efficiency (9.8%) obtained on cells featuring an a-Si:H/TiO2/Al rear contact is due to severe degradation of passivation of the a-Si:H upon FGA.
dc.description.sponsorshipThe authors would like to thank Eric Schneller for assistance with analysis of the quantum efficiency and reflectance data. The authors acknowledge financial support from the Australian Renewable Energy Agency (ARENA) under the Postdoctoral Fellowship. The authors would also like to acknowledge support for this work by the US Department of Energy, Office of Energy Efficiency and Renewable Energy, in the Solar Energy Technologies Program, under Award Number DE-EE0004947. Finally, the Materials Characterization Facility at University of Central Florida (UCF) is acknowledged for usage of its facilities.
dc.publisherCambridge University Press (CUP)
dc.subjectcrystalline silicon
dc.subjectelectron-selective contact
dc.subjectsolar cell
dc.subjectTiO2
dc.titleTransmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalMicroscopy and Microanalysis
dc.contributor.institutionC-Si Division, U.S. Photovoltaic Manufacturing Consortium, 12354 Research Parkway, Suite 210, Orlando, FL, 32826, United States
dc.contributor.institutionFlorida Solar Energy Center, University of Central Florida, 1679 Clearlake Rd, Cocoa, FL, 32922, , United States
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Central Florida, 12760 Pegasus Drive, Engineering I, Suite 207, Orlando, FL, 32816, United States
dc.contributor.institutionResearch School of Engineering, Australian National University, Engineering Building 32, North Road ACT 0200, North Rd, Canberra, ACT, 2601, Australia
dc.contributor.institutionCREOL, College of Optics and Photonics, University of Central Florida, 4304 Scorpius St, Orlando, FL, 32816, United States
kaust.personYang, Xinbo
dc.date.published-online2017-08-15
dc.date.published-print2017-10


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