Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures
Park, Young Jae
Al tahtamouni, T. M.
Anjum, Dalaver H.
Dupuis, Russell D.
KAUST DepartmentAdvanced Semiconductor Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Imaging and Characterization Core Lab
Materials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/626578
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AbstractWe reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.
CitationSun H, Wu F, Park YJ, Al tahtamouni T. M., Liao C-H, et al. (2017) Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures. Applied Physics Express 11: 011001. Available: http://dx.doi.org/10.7567/APEX.11.011001.
SponsorsThe KAUST authors acknowledge the support of the GCC Research Program REP/1/3189-01-01, Baseline BAS/1/1664-01-01, and Equipment BAS/1/1664-01-07. The work at QU was supported by the GCC Research Program GCC-2017-007. The work at the Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.
PublisherJapan Society of Applied Physics
JournalApplied Physics Express