Sub-Nanometer Channels Embedded in Two-Dimensional Materials

Abstract

Two-dimensional (2D) materials are among the most promising candidates for next-generation electronics due to their atomic thinness, allowing for flexible transparent electronics and ultimate length scaling1. Thus far, atomically-thin p-n junctions2-7, metal-semiconductor contacts8-10, and metal-insulator barriers11-13 have been demonstrated. While 2D materials achieve the thinnest possible devices, precise nanoscale control over the lateral dimensions are also necessary. Although external one-dimensional (1D) carbon nanotubes14 can be used to locally gate 2D materials, this adds a non-trivial third dimension, complicating device integration and flexibility. Here, we report the direct synthesis of sub-nanometer 1D MoS2 channels embedded within WSe2 monolayers, using a dislocation-catalyzed approach. The 1D channels have edges free of misfit dislocations and dangling bonds, forming a coherent interface with the embedding 2D matrix. Periodic dislocation arrays produce 2D superlattices of coherent MoS2 1D channels in WSe2. Molecular dynamics (MD) simulations have identified other combinations of 2D materials that could form 1D channels. Density function theory (DFT) calculation predicts these 1D channels display type II band alignment needed for carrier confinement and charge separation to access the ultimate length scales necessary for future electronic applications.