Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes
Shakfa, Mohammad Khaled
Mumthaz Muhammed, Mufasila
Ng, Tien Khee
Roqan, Iman S.
Ooi, Boon S.
KAUST DepartmentAdvanced Semiconductor Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
Online Publication Date2017-12-19
Print Publication Date2018-03-21
Permanent link to this recordhttp://hdl.handle.net/10754/626449
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AbstractSpontaneously-grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still suffer from low efficiency partially because of the strong surface recombination caused by surface states, i.e., oxidized surface and high density surface states. Several surface passivation methods have been introduced to reduce surface non-radiative recombination by using complex and toxic chemicals. Here, we present an effective method to suppress such undesirable surface recombination of the AlGaN nanowires via diluted potassium hydroxide (KOH) solution; a commonly used chemical process in semiconductor fabrication which is barely used as surface passivation solution in self-assembled nitride-based nanowires. The transmission electron microscopy investigation on the samples reveals almost intact nanowire structures after the passivation process. We demonstrated an approximately 49.7% enhancement in the ultraviolet light output power after 30-s KOH treatment on AlGaN nanowires grown on titanium-coated silicon substrates. We attribute such a remarkable enhancement to the removal of the surface dangling bonds and oxidized nitrides (Ga-O or Al-O bonds) at the surface as we observe the change of the carrier lifetime before and after the passivation. Thus, our results highlight the possibility of employing this process for the realization of high performance nanowire UV emitters.
CitationSun H, Shakfa MK, Muhammed M, Janjua B, Li K, et al. (2017) Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes. ACS Photonics. Available: http://dx.doi.org/10.1021/acsphotonics.7b01235.
SponsorsWe acknowledge the financial support from King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01 and BAS/1/1664-01-01. Also, BSO, TKN, MKS and BJ gratefully acknowledge funding support from King Abdulaziz City for Science and Technology, grant no. KACST TIC R2-FP-008. The time-resolved PL measurements have been carried out and analyzed by M. M. Muhammed and I. S. Roqan.
PublisherAmerican Chemical Society (ACS)