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dc.contributor.authorGrigoryan, Vahram L.
dc.contributor.authorXiao, Jiang
dc.contributor.authorWang, Xuhui
dc.contributor.authorXia, Ke
dc.date.accessioned2017-12-21T13:57:03Z
dc.date.available2017-12-21T13:57:03Z
dc.date.issued2017-10-23
dc.identifier.citationGrigoryan VL, Xiao J, Wang X, Xia K (2017) Anomalous Hall effect scaling in ferromagnetic thin films. Physical Review B 96. Available: http://dx.doi.org/10.1103/PhysRevB.96.144426.
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.doi10.1103/PhysRevB.96.144426
dc.identifier.urihttp://hdl.handle.net/10754/626405
dc.description.abstractWe propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.
dc.description.sponsorshipJ.X. thanks X. Jin of Fudan University and A. Granovsky of Moscow State University for valuable discussions. This work was supported by the National Key Research and Development Program of China under Grants No. 2017YFA0303300 and No. 2016YFA0300702, the National Natural Science Foundation of China under Grants No. 11474065, No. 11734004, No. 61774017, and No. 21421003.
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.144426
dc.rightsArchived with thanks to PHYSICAL REVIEW B
dc.titleAnomalous Hall effect scaling in ferromagnetic thin films
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionBeijing Normal University, Zhuhai, Guangdong, 519087, , China
dc.contributor.institutionCenter for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, , China
dc.contributor.institutionInstitute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai, 200433, , China
dc.contributor.institutionCollaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, , China
dc.contributor.institutionDepartment of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200433, , China
dc.contributor.institutionKwantum Links, Benoordenhoutseweg 23, The Hague, 2596 BA, , Netherlands
dc.contributor.institutionSynergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha, 410081, , China
dc.identifier.arxivid1607.02949
kaust.personWang, Xuhui
refterms.dateFOA2018-06-13T19:09:11Z


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