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dc.contributor.authorLiu, Kaikai
dc.contributor.authorSun, Haiding
dc.contributor.authorAlqatari, Feras
dc.contributor.authorGuo, Wenzhe
dc.contributor.authorLiu, Xinwei
dc.contributor.authorLi, Jingtao
dc.contributor.authorTorres Castanedo, Carlos G
dc.contributor.authorLi, Xiaohang
dc.date.accessioned2017-12-05T06:12:00Z
dc.date.available2017-12-05T06:12:00Z
dc.date.issued2017-11-30
dc.identifier.citationLiu K, Sun H, AlQatari F, Guo W, Liu X, et al. (2017) Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering. Applied Physics Letters 111: 222106. Available: http://dx.doi.org/10.1063/1.5008451.
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.5008451
dc.identifier.urihttp://hdl.handle.net/10754/626289
dc.description.abstractThe spontaneous polarization (SP) and piezoelectric (PZ) constants of BxAl1-xN and BxGa1-xN (0 ≤ x ≤ 1) ternary alloys were calculated with the hexagonal structure as reference. The SP constants show moderate nonlinearity due to the volume deformation and the dipole moment difference between the hexagonal and wurtzite structures. The PZ constants exhibit significant bowing because of the large lattice difference between binary alloys. Furthermore, the PZ constants of BxAl1-xN and BxGa1-xN become zero at boron compositions of ∼87% and ∼74%, respectively, indicating non-piezoelectricity. The large range of SP and PZ constants of BxAl1-xN (BAlN) and BxGa1-xN (BGaN) can be beneficial for the compound semiconductor device development. For instance, zero heterointerface polarization ΔP can be formed for BAlN and BGaN based heterojunctions with proper B compositions, potentially eliminating the quantum-confined Stark effect for c-plane optical devices and thus removing the need of non-polar layers and substrates. Besides, large heterointerface polarization ΔP is available that is desirable for electronic devices.
dc.description.sponsorshipThe KAUST authors would like to acknowledge the support of GCC Research Program REP/1/3189-01-01 and KAUST Baseline Fund BAS/1/1664-01-01.
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.5008451
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.5008451.
dc.titleWurtzite BAlN and BGaN alloys for heterointerface polarization engineering
dc.typeArticle
dc.contributor.departmentAdvanced Semiconductor Laboratory
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
kaust.personLiu, Kaikai
kaust.personSun, Haiding
kaust.personAlqatari, Feras
kaust.personGuo, Wenzhe
kaust.personLiu, Xinwei
kaust.personLi, Jingtao
kaust.personTorres Castanedo, Carlos G
kaust.personLi, Xiaohang
kaust.grant.numberREP/1/3189-01-01
kaust.grant.numberBAS/1/1664-01-01
refterms.dateFOA2018-11-30T00:00:00Z
dc.date.published-online2017-11-30
dc.date.published-print2017-11-27


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