Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering
Torres Castanedo, Carlos G
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Physical Sciences and Engineering (PSE) Division
Materials Science and Engineering Program
Electrical Engineering Program
King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabia
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AbstractThe spontaneous polarization (SP) and piezoelectric (PZ) constants of BxAl1-xN and BxGa1-xN (0 ≤ x ≤ 1) ternary alloys were calculated with the hexagonal structure as reference. The SP constants show moderate nonlinearity due to the volume deformation and the dipole moment difference between the hexagonal and wurtzite structures. The PZ constants exhibit significant bowing because of the large lattice difference between binary alloys. Furthermore, the PZ constants of BxAl1-xN and BxGa1-xN become zero at boron compositions of ∼87% and ∼74%, respectively, indicating non-piezoelectricity. The large range of SP and PZ constants of BxAl1-xN (BAlN) and BxGa1-xN (BGaN) can be beneficial for the compound semiconductor device development. For instance, zero heterointerface polarization ΔP can be formed for BAlN and BGaN based heterojunctions with proper B compositions, potentially eliminating the quantum-confined Stark effect for c-plane optical devices and thus removing the need of non-polar layers and substrates. Besides, large heterointerface polarization ΔP is available that is desirable for electronic devices.
CitationLiu K, Sun H, AlQatari F, Guo W, Liu X, et al. (2017) Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering. Applied Physics Letters 111: 222106. Available: http://dx.doi.org/10.1063/1.5008451.
SponsorsThe KAUST authors would like to acknowledge the support of GCC Research Program REP/1/3189-01-01 and KAUST Baseline Fund BAS/1/1664-01-01.
JournalApplied Physics Letters