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    Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering

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    Type
    Article
    Authors
    Liu, Kaikai cc
    Sun, Haiding cc
    Alqatari, Feras
    Guo, Wenzhe cc
    Liu, Xinwei
    Li, Jingtao
    Torres Castanedo, Carlos G
    Li, Xiaohang cc
    KAUST Department
    Advanced Semiconductor Laboratory
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    KAUST Grant Number
    REP/1/3189-01-01
    BAS/1/1664-01-01
    Date
    2017-11-30
    Online Publication Date
    2017-11-30
    Print Publication Date
    2017-11-27
    Permanent link to this record
    http://hdl.handle.net/10754/626289
    
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    Abstract
    The spontaneous polarization (SP) and piezoelectric (PZ) constants of BxAl1-xN and BxGa1-xN (0 ≤ x ≤ 1) ternary alloys were calculated with the hexagonal structure as reference. The SP constants show moderate nonlinearity due to the volume deformation and the dipole moment difference between the hexagonal and wurtzite structures. The PZ constants exhibit significant bowing because of the large lattice difference between binary alloys. Furthermore, the PZ constants of BxAl1-xN and BxGa1-xN become zero at boron compositions of ∼87% and ∼74%, respectively, indicating non-piezoelectricity. The large range of SP and PZ constants of BxAl1-xN (BAlN) and BxGa1-xN (BGaN) can be beneficial for the compound semiconductor device development. For instance, zero heterointerface polarization ΔP can be formed for BAlN and BGaN based heterojunctions with proper B compositions, potentially eliminating the quantum-confined Stark effect for c-plane optical devices and thus removing the need of non-polar layers and substrates. Besides, large heterointerface polarization ΔP is available that is desirable for electronic devices.
    Citation
    Liu K, Sun H, AlQatari F, Guo W, Liu X, et al. (2017) Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering. Applied Physics Letters 111: 222106. Available: http://dx.doi.org/10.1063/1.5008451.
    Sponsors
    The KAUST authors would like to acknowledge the support of GCC Research Program REP/1/3189-01-01 and KAUST Baseline Fund BAS/1/1664-01-01.
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.5008451
    Additional Links
    http://aip.scitation.org/doi/10.1063/1.5008451
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.5008451
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Material Science and Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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