Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers
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AbstractGaN crystal growth requires higher purity of materials. Some contaminants in NH3 gas could be the causal factor of defects in GaN crystals. These atoms act as donor or acceptor. In order to clearly demonstrate the effect of gaseous impurities such as H2O on the properties of undoped-GaN layer, high purity NH3 (N70) was used as NH3 source. The concentration of H2O in NH3 was varied at 32, 49, 75, 142, 266, 489, and 899 ppb, respectively. Under the same recipe, we deposited undoped-GaN epitaxial layer with purifier, and H2O-doped GaN series layers. As similar to the results of CO and CO2-doped GaN series, the increase tendency of carrier density changing with increasing H2O concentration. The FWHMs of XRC around (0002) remain stable, witnessing that the crystal quality of GaN layer remain good. LT (15K) PL of undoped-GaN and H2O-doped GaN were measured, the D0X emission peak intensity of all H2O-doped GaN are decreased drastically compared with undoped-GaN. H2O impurity was doped into GaN layer, which not only effects electrical properties and but also effects the radiative emission and furthermore effects PL intensity, its mechanism is discussed.
CitationOhkawa K, Wang Y (2017) Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers. AOPC 2017: Optoelectronics and Micro/Nano-optics. Available: http://dx.doi.org/10.1117/12.2284460.
SponsorsThanks are due to T. Teramoto for previous collaborations. This work was supported by Fundations (No. 61674051, No. 15JCYBJC52200, No. 20110711, No. KYDD07006)