Gallium nitride on gallium oxide substrate for integrated nonlinear optics
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
Online Publication Date2017-11-22
Print Publication Date2017-06
Permanent link to this recordhttp://hdl.handle.net/10754/626199
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AbstractGallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga<inf>2</inf>O<inf>3</inf>) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al<inf>2</inf>O<inf>3</inf>) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).
CitationAwan KM, Dolgaleva K, Muhammed MM, Roqan IS (2017) Gallium nitride on gallium oxide substrate for integrated nonlinear optics. 2017 Photonics North (PN). Available: http://dx.doi.org/10.1109/PN.2017.8090587.
Journal2017 Photonics North (PN)
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