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dc.contributor.authorHafiz, Md Abdullah Al
dc.contributor.authorIlyas, Saad
dc.contributor.authorAhmed, Sally
dc.contributor.authorYounis, Mohammad I.
dc.contributor.authorFariborzi, Hossein
dc.date.accessioned2017-11-14T12:46:05Z
dc.date.available2017-11-14T12:46:05Z
dc.date.issued2017-11-10
dc.identifier.citationHafiz MAA, Ilyas S, Ahmed S, Younis MI, Fariborzi H (2017) A Microbeam Resonator with Partial Electrodes for Logic and Memory Elements. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits: 1–1. Available: http://dx.doi.org/10.1109/JXCDC.2017.2772338.
dc.identifier.issn2329-9231
dc.identifier.doi10.1109/JXCDC.2017.2772338
dc.identifier.urihttp://hdl.handle.net/10754/626150
dc.description.abstractWe demonstrate logic and memory elements based on an in-plane clamped-clamped microbeam resonator. The micro-resonator is electrostatically actuated through a drive electrode and the motional signal is capacitively sensed at a sense electrode, while the resonance characteristics are modulated by DC voltage pulses provided at two separate partial electrodes, independent of the drive/sense electrodes. For the logic applications, we use two separate electrodes to provide DC voltages defined as the logic inputs. The high (low) motional signal at on-resonance (off-resonance) state is defined as the logic output state “1” (“0”). For the memory operation, two stable vibrational states, high and low, within the hysteretic regime are defined as the memory states, “1” and “0”, respectively. We take advantage of the split electrode configuration to provide positive and negative DC voltage pulses selectively to set/reset the memory states (“1”/“0”) without affecting the driving and sensing terminals. Excluding the energy cost for supporting electronics, these devices consume energy in 10’s of picojoules per logic/memory operations. Furthermore, the devices are fabricated using silicon on insulator (SOI) wafers, have the potential for on-chip integration, and operate at moderate pressure (~1 Torr) and room temperature.
dc.description.sponsorshipThis work was supported by King Abdullah University of Science and Technology (KAUST) office of sponsored research (OSR) under Award No. OSR-2016-CRG5-3001.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/document/8103925/
dc.rights(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.subjectClamped-clamped Microbeam Resonator
dc.subjectElectromechanical Computation
dc.subjectLogic Device
dc.subjectPartial Electrodes
dc.subjectRandom Access Memory
dc.titleA Microbeam Resonator with Partial Electrodes for Logic and Memory Elements
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMechanical Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalIEEE Journal on Exploratory Solid-State Computational Devices and Circuits
dc.eprint.versionPost-print
kaust.personHafiz, Md Abdullah Al
kaust.personIlyas, Saad
kaust.personAhmed, Sally
kaust.personYounis, Mohammad I.
kaust.personFariborzi, Hossein
kaust.grant.numberOSR-2016-CRG5-3001
refterms.dateFOA2018-06-13T10:21:34Z
dc.date.published-online2017-11-10
dc.date.published-print2017-12


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