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V004T09A011-DETC2017-67845.pdf
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Type
Conference PaperKAUST Department
Material Science and Engineering ProgramMechanical Engineering Program
Physical Science and Engineering (PSE) Division
Date
2017-11-03Online Publication Date
2017-11-03Print Publication Date
2017-08-06Permanent link to this record
http://hdl.handle.net/10754/626137
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We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.Citation
Kazmi, S. N. R., Hajjaj, A. Z., Costa, P. M. F. J., & Younis, M. I. (2017). Electrostatically Tunable Nanomechanical Shallow Arches. Volume 4: 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems. doi:10.1115/detc2017-67845Sponsors
This work has been supported through King Abdullah University of Science and Technology (KAUST) research funds.Publisher
ASME InternationalAdditional Links
http://proceedings.asmedigitalcollection.asme.org/proceeding.aspx?articleid=2662159ae974a485f413a2113503eed53cd6c53
10.1115/detc2017-67845