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dc.contributor.authorFlemban, Tahani H.
dc.contributor.authorHaque, Mohammed
dc.contributor.authorAjia, Idris A.
dc.contributor.authorAlwadai, Norah M.
dc.contributor.authorMitra, Somak
dc.contributor.authorWu, Tao
dc.contributor.authorRoqan, Iman S.
dc.date.accessioned2017-10-30T08:39:50Z
dc.date.available2017-10-30T08:39:50Z
dc.date.issued2017-10-16
dc.identifier.citationFlemban TH, Haque MA, Ajia I, Alwadai N, Mitra S, et al. (2017) A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity. ACS Applied Materials & Interfaces 9: 37120–37127. Available: http://dx.doi.org/10.1021/acsami.7b09645.
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.doi10.1021/acsami.7b09645
dc.identifier.urihttp://hdl.handle.net/10754/626012
dc.description.abstractEnhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.
dc.description.sponsorshipTahani Flemban is grateful for a scholarship from Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia. The authors wish to thank Ms. Ecaterina Ware from Imperial College London, UK, for TEM sample preparation and Dr. M. A. Roldan from KAUST core lab for HR-TEM measurements. The authors thank KAUST for the financial support.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsami.7b09645
dc.subjectheterojunctions
dc.subjectnanotubes
dc.subjectoxides
dc.subjectphotodetectors
dc.subjectpulsed laser depositions
dc.subjecttime-resolved measurements
dc.subjectultraviolet
dc.titleA Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity
dc.typeArticle
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energy
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.identifier.journalACS Applied Materials & Interfaces
kaust.personFlemban, Tahani H.
kaust.personHaque, Mohammed
kaust.personAjia, Idris A.
kaust.personAlwadai, Norah Mohammed Mosfer
kaust.personMitra, Somak
kaust.personWu, Tao
kaust.personRoqan, Iman S.
dc.date.published-online2017-10-16
dc.date.published-print2017-10-25


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