Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires
AuthorsRota, Michele B.
Ameruddin, Amira S.
Tan, Hark Hoe
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/625989
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AbstractOne hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.
CitationRota MB, Ameruddin AS, Wong-Leung J, Belabbes A, Gao Q, et al. (2017) Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires. The Journal of Physical Chemistry C 121: 16650–16656. Available: http://dx.doi.org/10.1021/acs.jpcc.7b05482.
SponsorsA.P. acknowledges funding by Sapienza University di Roma under "Ateneo Awards 2015" Grant. The Australian authors acknowledge the Australian Research Council for financial support and Australian National Fabrication Facility and Australian Microscopy and Microanalysis Research Facility for providing access to some of the equipment used in this work. Dr. Aruni Fonseka is acknowledged for fruitful discussion.
PublisherAmerican Chemical Society (ACS)