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dc.contributor.authorAbdallah, Amir
dc.contributor.authorDaif, Ounsi El
dc.contributor.authorAïssa, Brahim
dc.contributor.authorKivambe, Maulid
dc.contributor.authorTabet, Nouar
dc.contributor.authorSeif, Johannes
dc.contributor.authorHaschke, Jan
dc.contributor.authorCattin, Jean
dc.contributor.authorBoccard, Mathieu
dc.contributor.authorDe Wolf, Stefaan
dc.contributor.authorBallif, Christophe
dc.date.accessioned2017-10-30T07:55:30Z
dc.date.available2017-10-30T07:55:30Z
dc.date.issued2017-09-22
dc.identifier.citationAbdallah A, Daif OE, Aïssa B, Kivambe M, Tabet N, et al. (2017) Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment. Energy Procedia 124: 331–337. Available: http://dx.doi.org/10.1016/j.egypro.2017.09.307.
dc.identifier.issn1876-6102
dc.identifier.doi10.1016/j.egypro.2017.09.307
dc.identifier.urihttp://hdl.handle.net/10754/625977
dc.description.abstractWe report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell's configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.
dc.description.sponsorshipThis work has been carried out within the Qatar Environment and Energy Research Institute (QEERI) and Ecole Polytechnique Fédérale de Lausanne (EPFL), Photovoltaics and Thin-Film Electronics Laboratory (PV-lab) collaboration.
dc.publisherElsevier BV
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S1876610217342789
dc.rightsUnder a Creative Commons license
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectcurrent-voltage curve
dc.subjectirradiance
dc.subjectSilicon heterojucntion
dc.subjecttemeprature coefficient
dc.titleTowards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment
dc.typeArticle
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalEnergy Procedia
dc.conference.date2017-04-03 to 2017-04-05
dc.conference.name7th International Conference on Silicon Photovoltaics, SiliconPV 2017
dc.conference.locationFreiburg, DEU
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionQatar Environment and Energy Research Institute (QEERI), HBKU, Qatar Foundation, P.O. Box 34110, Doha, , , , Qatar
dc.contributor.institutionEedama Advisors Limited, Masdar City, Abu Dhabi, , United Arab Emirates
dc.contributor.institutionCollege of Science and Engineering, HBKU, P.O. Box 34110, Doha, , Qatar
dc.contributor.institutionMeyer Burger, , Switzerland
dc.contributor.institutionPhotovoltaics and Thin-Film Electronics Laboratory (PV-lab), Institute of Microengineering, Ecole Polytechnique Fédérale de Lausanne, Rue de la Maladière 71B, Neuchâtel, CH-2002, , Switzerland
kaust.personDe Wolf, Stefaan
refterms.dateFOA2018-06-14T03:37:20Z


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