Show simple item record

dc.contributor.authorMüller, Ralph
dc.contributor.authorReichel, Christian
dc.contributor.authorYang, Xinbo
dc.contributor.authorRichter, Armin
dc.contributor.authorBenick, Jan
dc.contributor.authorHermle, Martin
dc.date.accessioned2017-10-30T07:55:30Z
dc.date.available2017-10-30T07:55:30Z
dc.date.issued2017-09-22
dc.identifier.citationMüller R, Reichel C, Yang X, Richter A, Benick J, et al. (2017) Impact of the homogeneous junction breakdown in IBC solar cells on the passivation quality of Al 2 O 3 and SiO 2 : degradation and regeneration behavior. Energy Procedia 124: 365–370. Available: http://dx.doi.org/10.1016/j.egypro.2017.09.311.
dc.identifier.issn1876-6102
dc.identifier.doi10.1016/j.egypro.2017.09.311
dc.identifier.urihttp://hdl.handle.net/10754/625970
dc.description.abstractWithin the last years, many different approaches for the simplified fabrication of interdigitated back-contact (IBC) solar cells have been developed. Most of those concepts result in emitter and back-surface field (BSF) regions that are in direct contact to each other which leads to a controlled breakdown under reverse bias at the pn junction. In this work, the influence of the reverse breakdown on the passivation quality of AlO and SiO at the pn junction is investigated, not only shedding light on the degradation but also on the regeneration behavior of the cells. It was found that cells with AlO passivation on the back side degrade during reverse breakdown whereas sister cells with SiO passivation were rather unaffected. Consequently, the degradation seems to be related to the passivation layer. However, it is shown that the passivation can be regenerated even under normal operation condition. A possible explanation is the discharging of interface traps, which are getting recharged already at room temperature.
dc.description.sponsorshipThe authors want to thank Sonja Seitz, Andreas Lösel, Felix Schätzle, Antonio Leimenstoll, Karin Zimmermann, Astrid Seiler, Nadine Brändlin and Elisabeth Schäffer for sample processing, measurements, and technical support as well as the German Federal Ministry for Economic Affairs and Energy (contract number 0325292 „ForTeS“) and the European Union’s Seventh Programme (Grant No. 608498 “HERCULES”) for funding.
dc.publisherElsevier BV
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S1876610217342820
dc.rightsUnder a Creative Commons license
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectBack Contact
dc.subjectBack junction
dc.subjectBreakdown
dc.subjectPassivation
dc.subjectReverse bias
dc.subjectSilicon
dc.subjectSolar cell
dc.titleImpact of the homogeneous junction breakdown in IBC solar cells on the passivation quality of Al 2 O 3 and SiO 2 : degradation and regeneration behavior
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalEnergy Procedia
dc.conference.date2017-04-03 to 2017-04-05
dc.conference.name7th International Conference on Silicon Photovoltaics, SiliconPV 2017
dc.conference.locationFreiburg, DEU
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionAlbert Ludwig University Freiburg, Department of Sustainable Systems Engineering, Georges-Köhler-Allee 103, Freiburg, D-79110, , Germany
dc.contributor.institutionFraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstraße 2, Freiburg, D-79110, , Germany
dc.contributor.institutionResearch School of Engineering, Australian National University, Canberra, ACT, 2601, , Australia
kaust.personYang, Xinbo
refterms.dateFOA2018-06-14T05:36:57Z
dc.date.published-online2017-09-22
dc.date.published-print2017-09


Files in this item

Thumbnail
Name:
1-s2.0-S1876610217342820-main.pdf
Size:
656.3Kb
Format:
PDF
Description:
Main article

This item appears in the following Collection(s)

Show simple item record

Under a Creative Commons license
Except where otherwise noted, this item's license is described as Under a Creative Commons license