Type
ArticleKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionIntegrated Nanotechnology Lab
Date
2017-10-19Online Publication Date
2017-10-19Print Publication Date
2017-11Permanent link to this record
http://hdl.handle.net/10754/625934
Metadata
Show full item recordAbstract
Zinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nano-islands charge trapping layer. Both nano-islands are deposited using atomic layer deposition (ALD), however, the different sizes, distribution and properties of the materials result in different memory performance. The results show that at the 32-nm node charge trapping memory with 127 ZrO2 nano-islands can provide a 9.4 V memory window. However, with ZnO only 31 nano-islands can provide a window of 2.5 V. The results indicate that ZrO2 nano-islands are more promising than ZnO in scaled down devices due to their higher density, higher-k, and absence of quantum confinement effects.Citation
El-Atab N, Saadat I, Saraswat K, Nayfeh A (2017) Nano-islands Based Charge Trapping Memory: A Scalability Study. IEEE Transactions on Nanotechnology: 1–1. Available: http://dx.doi.org/10.1109/tnano.2017.2764745.Sponsors
We gratefully acknowledge financial support for this work provided by the Masdar Institute of Science and Technology, Office of Naval Research Global grant N62909-16-1-2031. Nazek El-Atab acknowledges L’Oréal-UNESCO 2017 For Women in Science International Rising Talents Award.Additional Links
http://ieeexplore.ieee.org/document/8074763/ae974a485f413a2113503eed53cd6c53
10.1109/tnano.2017.2764745