KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Integrated Nanotechnology Lab
Online Publication Date2017-10-19
Print Publication Date2017-11
Permanent link to this recordhttp://hdl.handle.net/10754/625934
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AbstractZinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nano-islands charge trapping layer. Both nano-islands are deposited using atomic layer deposition (ALD), however, the different sizes, distribution and properties of the materials result in different memory performance. The results show that at the 32-nm node charge trapping memory with 127 ZrO2 nano-islands can provide a 9.4 V memory window. However, with ZnO only 31 nano-islands can provide a window of 2.5 V. The results indicate that ZrO2 nano-islands are more promising than ZnO in scaled down devices due to their higher density, higher-k, and absence of quantum confinement effects.
CitationEl-Atab N, Saadat I, Saraswat K, Nayfeh A (2017) Nano-islands Based Charge Trapping Memory: A Scalability Study. IEEE Transactions on Nanotechnology: 1–1. Available: http://dx.doi.org/10.1109/tnano.2017.2764745.
SponsorsWe gratefully acknowledge financial support for this work provided by the Masdar Institute of Science and Technology, Office of Naval Research Global grant N62909-16-1-2031. Nazek El-Atab acknowledges L’Oréal-UNESCO 2017 For Women in Science International Rising Talents Award.