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dc.contributor.authorQian, Ling-Xuan
dc.contributor.authorZhang, Hua-Fan
dc.contributor.authorLai, P. T.
dc.contributor.authorWu, Ze-Han
dc.contributor.authorLiu, Xing-Zhao
dc.date.accessioned2017-10-17T11:47:40Z
dc.date.available2017-10-17T11:47:40Z
dc.date.issued2017-09-20
dc.identifier.citationQian L-X, Zhang H-F, Lai PT, Wu Z-H, Liu X-Z (2017) High-sensitivity β-Ga_2O_3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate. Optical Materials Express 7: 3643. Available: http://dx.doi.org/10.1364/OME.7.003643.
dc.identifier.issn2159-3930
dc.identifier.doi10.1364/OME.7.003643
dc.identifier.urihttp://hdl.handle.net/10754/625891
dc.description.abstractRecently, monoclinic Ga2O3 (beta-Ga2O3) photodetectors (PDs) have been extensively studied for various commercial and military applications due to the merits of intrinsic solar rejection, high gain, and great compactness. In this work, c-plane sapphire substrates were annealed under different temperatures in a vacuum furnace prior to the molecular beam epitaxy (MBE) of beta-Ga2O3 thin film, which yielded a smoother surface and even a terraceand- step-like morphology on the substrate, resulting in improved crystallinity of the epitaxial film. Accordingly, both the dark and photo currents of beta-Ga2O3 metal-semiconductor-metal (MSM) PDs were increased by the enhanced carrier mobility (mu) of the more crystalline film. However, the substrate-annealing temperature must be sufficiently high to offset the rise of the dark current and thus achieve a remarkable improvement in the photodetection properties. As a result, the PD fabricated on the 1050 degrees C-annealed substrate exhibited extremely high sensitivity, for example, high responsivity (R) of 54.9 A/ W and large specific detectivity (D*) of 3.71 x 10(14) Jones. Both parameters were increased by one order of magnitude because of the combined effects of the dramatic increase in mu and the effective reduction in defect-related recombination centers. Nevertheless, the latter also prolonged the recovery time of the PD. These findings suggest another way to develop beta-Ga2O3 PD with extremely high sensitivity. (C) 2017 Optical Society of America
dc.description.sponsorshipNational Natural Science Foundation of China (61504022).
dc.publisherThe Optical Society
dc.relation.urlhttps://www.osapublishing.org/ome/abstract.cfm?uri=ome-7-10-3643
dc.rightsCreative Commons Attribution License is available
dc.titleHigh-sensitivity β-Ga_2O_3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate
dc.typeArticle
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalOptical Materials Express
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionState Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 611731, China
dc.contributor.institutionDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong
kaust.personZhang, Hua-Fan
refterms.dateFOA2018-06-14T05:24:39Z
dc.date.published-online2017-09-20
dc.date.published-print2017-10-01


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