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dc.contributor.authorFaber, Hendrik
dc.contributor.authorDas, Satyajit
dc.contributor.authorLin, Yen-Hung
dc.contributor.authorPliatsikas, Nikos
dc.contributor.authorZhao, Kui
dc.contributor.authorKehagias, Thomas
dc.contributor.authorDimitrakopulos, George
dc.contributor.authorAmassian, Aram
dc.contributor.authorPatsalas, Panos A.
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2017-10-17T08:48:35Z
dc.date.available2017-10-17T08:48:35Z
dc.date.issued2017-04-28
dc.identifier.citationFaber H, Das S, Lin Y-H, Pliatsikas N, Zhao K, et al. (2017) Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution. Science Advances 3: e1602640. Available: http://dx.doi.org/10.1126/sciadv.1602640.
dc.identifier.issn2375-2548
dc.identifier.doi10.1126/sciadv.1602640
dc.identifier.urihttp://hdl.handle.net/10754/625869
dc.description.abstractThin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.
dc.description.sponsorshipH.F., Y.-H.L., and T.D.A. were supported by the European Research Council AMPRO project no. 280221.
dc.publisherAmerican Association for the Advancement of Science (AAAS)
dc.relation.urlhttp://advances.sciencemag.org/content/3/3/e1602640
dc.rightsThis is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/
dc.subjectmetal oxide semiconductors
dc.subjectsolution processing
dc.subjectFlexible Electronics
dc.subjectheterojunction transistors
dc.subjectthin-film transistors
dc.titleHeterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalScience Advances
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K.
dc.contributor.institutionDepartment of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece.
kaust.personZhao, Kui
kaust.personAmassian, Aram
kaust.personAnthopoulos, Thomas D.
refterms.dateFOA2018-06-14T05:23:56Z


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This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
Except where otherwise noted, this item's license is described as This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.