Extreme ultraviolet resist materials for sub-7 nm patterning

Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.

Li L, Liu X, Pal S, Wang S, Ober CK, et al. (2017) Extreme ultraviolet resist materials for sub-7 nm patterning. Chem Soc Rev 46: 4855–4866. Available: http://dx.doi.org/10.1039/c7cs00080d.

The authors gratefully acknowledge the support from GlobalFoundries and Cornell Nanoscale Science and Technology (CNF), the Cornell Center for Materials Research (CCMR) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU). Dr L. Li and Dr X. Liu contributed equally to this work.

Royal Society of Chemistry (RSC)

Chemical Society Reviews


Permanent link to this record