Analysis of Vegard’s law for lattice matching In x Al 1−x N to GaN by metalorganic chemical vapor deposition
AuthorsForonda, Humberto M.
Young, Erin C.
Laurent, Matthew A.
DenBaars, Steven P.
Speck, James S.
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AbstractCoherent InxAl1−xN (x = 0.15 to x = 0.28) films were grown by metalorganic chemical vapor deposition on GaN templates to investigate if the films obey Vegard’s Law by comparing the film stress-thickness product from wafer curvature before and after InxAl1−xN deposition. The In composition and film thickness were verified using atom probe tomography and high resolution X-ray diffraction, respectively. Ex-situ curvature measurements were performed to analyze the curvature before and after the InxAl1−xN deposition. At ∼In0.18Al0.82N, no change in curvature was observed following InAlN deposition; confirming that films of this composition are latticed matched to GaN, obeying Vegard’s law. The relaxed a0- and c0- lattice parameters of InxAl1−xN were experimentally determined and in agreement with lattice parameters predicted by Vegard’s law.
CitationForonda HM, Mazumder B, Young EC, Laurent MA, Li Y, et al. (2017) Analysis of Vegard’s law for lattice matching In x Al 1−x N to GaN by metalorganic chemical vapor deposition. Journal of Crystal Growth 475: 127–135. Available: http://dx.doi.org/10.1016/j.jcrysgro.2017.06.008.
SponsorsThis work was supported by the King Abduallah Center for Science and Technology and King Abdullah University of Science and Technology (KACST/KAUST) as well as the Materials Research Laboratory and California Nanosystems Institute at UC Santa Barbara for providing access and training to their laboratories. Support for JSS was provided by ONR through program N00014-15-1-2074 (Paul Maki, Program Manager).
JournalJournal of Crystal Growth