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dc.contributor.authorPark, Woojin
dc.contributor.authorMin, Jung-Wook
dc.contributor.authorShaikh, Sohail F.
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2017-10-03T12:49:38Z
dc.date.available2017-10-03T12:49:38Z
dc.date.issued2017-09-07
dc.identifier.citationPark W, Min J-W, Shaikh SF, Hussain MM (2017) Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact. physica status solidi (a) 214: 1700534. Available: http://dx.doi.org/10.1002/pssa.201700534.
dc.identifier.issn1862-6300
dc.identifier.doi10.1002/pssa.201700534
dc.identifier.urihttp://hdl.handle.net/10754/625760
dc.description.abstractMolybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved.
dc.description.sponsorshipThis publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2015-Sensors-2707.
dc.publisherWiley
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201700534/full
dc.rightsThis is the peer reviewed version of the following article: Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact, which has been published in final form at http://doi.org/10.1002/pssa.201700534. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
dc.subjectContacts
dc.subjectField-effect transistors
dc.subjectInterfaces
dc.subjectMoS2
dc.subjectThin films
dc.subjectTiO2
dc.titleStable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalphysica status solidi (a)
dc.eprint.versionPost-print
kaust.personPark, Woojin
kaust.personMin, Jung-Wook
kaust.personShaikh, Sohail F.
kaust.personHussain, Muhammad Mustafa
dc.date.published-online2017-09-07
dc.date.published-print2017-12


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