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dc.contributor.authorLee, Da Hoon
dc.contributor.authorKang, Sun Kil
dc.contributor.authorPak, Yusin
dc.contributor.authorLim, Namsoo
dc.contributor.authorLee, Ryeri
dc.contributor.authorKumaresan, Yogeenth
dc.contributor.authorLee, Sungeun
dc.contributor.authorLee, Chaedeok
dc.contributor.authorHam, Moon-Ho
dc.contributor.authorJung, Gun Young
dc.date.accessioned2017-10-03T12:49:36Z
dc.date.available2017-10-03T12:49:36Z
dc.date.issued2017-08-05
dc.identifier.citationLee DH, Kang SK, Pak Y, Lim N, Lee R, et al. (2018) Transfer of preheat-treated SnO 2 via a sacrificial bridge-type ZnO layer for ethanol gas sensor. Sensors and Actuators B: Chemical 255: 70–77. Available: http://dx.doi.org/10.1016/j.snb.2017.08.025.
dc.identifier.issn0925-4005
dc.identifier.doi10.1016/j.snb.2017.08.025
dc.identifier.urihttp://hdl.handle.net/10754/625722
dc.description.abstractThe progress in developing the microelectromechanical system (MEMS) heater-based SnO2 gas sensors was hindered by the subsequent heat treatment of the tin oxide (SnO2), nevertheless it is required to obtain excellent sensor characteristics. During the sintering process, the MEMS heater and the contact electrodes can be degraded at such a high temperature, which could reduce the sensor response and reliability. In this research, we presented a process of preheating the printed SnO2 sensing layer on top of a sacrificial bridge-type ZnO layer at such a high temperature, followed by transferring it onto the contact electrodes of sensor device by selective etching of the sacrificial ZnO layer. Therefore, the sensor device was not exposed to the high sintering temperature. The SnO2 gas sensor fabricated by the transfer process exhibited a rectangular sensing curve behavior with a rapid response of 52 s at 20 ppm ethanol concentration. In addition, reliable and repeatable sensing characteristics were obtained even at an ethanol gas concentration of 5 ppm.
dc.description.sponsorshipThis work was supported by the Materials & Devices Advanced Research Institute of LG Electronics Inc. in Seoul, Korea, and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2013R1A1A2061494).
dc.publisherElsevier BV
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S0925400517314478
dc.subjectBridge-type ZnO layer
dc.subjectPreheating of SnO2 sensing layer
dc.subjectGas sensor
dc.subjectTransfer
dc.titleTransfer of preheat-treated SnO 2 via a sacrificial bridge-type ZnO layer for ethanol gas sensor
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalSensors and Actuators B: Chemical
dc.contributor.institutionSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
dc.contributor.institutionMaterials & Production Engineering Research Institute Division, Sensor Solution Lab., LG Electronics, Woomyeon R&D Campus, 38 Baumoe-ro, Seocho-gu, Seoul, 06763, Republic of Korea
kaust.personPak, Yusin


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