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dc.contributor.authorChand, Umesh
dc.contributor.authorAlawein, Meshal
dc.contributor.authorFariborzi, Hossein
dc.date.accessioned2017-10-03T12:49:36Z
dc.date.available2017-10-03T12:49:36Z
dc.date.issued2017-08-05
dc.identifier.citationChand U, Alawein M, Fariborzi H (2017) Enhancement of Endurance in HfO 2 -Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer . ECS Transactions 77: 1971–1976. Available: http://dx.doi.org/10.1149/07711.1971ecst.
dc.identifier.issn1938-6737
dc.identifier.issn1938-5862
dc.identifier.doi10.1149/07711.1971ecst
dc.identifier.urihttp://hdl.handle.net/10754/625721
dc.description.abstractWe propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.
dc.description.sponsorshipThis work is supported by the Nanofabrication Core Laboratories at King Abdullah University of Science and Technology, Saudi Arabia.
dc.publisherThe Electrochemical Society
dc.relation.urlhttp://ecst.ecsdl.org/content/77/11/1971
dc.titleEnhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalECS Transactions
kaust.personChand, Umesh
kaust.personAlawein, Meshal
kaust.personFariborzi, Hossein


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