Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2017-08-04
Print Publication Date2017-07-07
Permanent link to this recordhttp://hdl.handle.net/10754/625721
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AbstractWe propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.
CitationChand U, Alawein M, Fariborzi H (2017) Enhancement of Endurance in HfO 2 -Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer . ECS Transactions 77: 1971–1976. Available: http://dx.doi.org/10.1149/07711.1971ecst.
SponsorsThis work is supported by the Nanofabrication Core Laboratories at King Abdullah University of Science and Technology, Saudi Arabia.
PublisherThe Electrochemical Society