Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics
Type
ArticleAuthors
Alshammari, Fwzah HamudHota, Mrinal Kanti
Wang, Zhenwei
Aljawhari, Hala
Alshareef, Husam N.
KAUST Department
Functional Nanomaterials and Devices Research GroupMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Visual Computing Center (VCC)