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dc.contributor.authorSong, Zhibo
dc.contributor.authorSchultz, Thorsten
dc.contributor.authorDing, Zijing
dc.contributor.authorLei, Bo
dc.contributor.authorHan, Cheng
dc.contributor.authorAmsalem, Patrick
dc.contributor.authorLin, Tingting
dc.contributor.authorChi, Dongzhi
dc.contributor.authorWong, Swee Liang
dc.contributor.authorZheng, Yu Jie
dc.contributor.authorLi, Ming-yang
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorChen, Wei
dc.contributor.authorKoch, Norbert
dc.contributor.authorHuang, Yu Li
dc.contributor.authorWee, Andrew Thye Shen
dc.date.accessioned2017-10-03T12:49:35Z
dc.date.available2017-10-03T12:49:35Z
dc.date.issued2017-08-03
dc.identifier.citationSong Z, Schultz T, Ding Z, Lei B, Han C, et al. (2017) Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor. ACS Nano 11: 9128–9135. Available: http://dx.doi.org/10.1021/acsnano.7b03953.
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.pmid28753270
dc.identifier.doi10.1021/acsnano.7b03953
dc.identifier.urihttp://hdl.handle.net/10754/625708
dc.description.abstractTwo-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe2), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe2. At the 1D border between the doped and undoped SL-WSe2 regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe2. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.
dc.description.sponsorshipA.T.S.W. acknowledges financial support from MOE AcRF Tier 1 Grant Number R-144-000-321-112 and the Graphene Research Centre. Y.L.H. and D.C. acknowledge the A-STAR SERC grant support for the 2D growth project under the 2D pharos program (SERC 1527000012). Work in Berlin was supported by the DFG (SFB951 and AM419/1-1). Calculations were performed on the Graphene Research Centre cluster supported by Prof. Su Ying Quek.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsnano.7b03953
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsnano.7b03953
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsnano.7b03953.
dc.subjectCharge transfer
dc.subjectPhotoemission Spectroscopy
dc.subjectScanning Tunneling Microscopy/spectroscopy
dc.subjectThomas−fermi Screening
dc.subjectLateral Intrinsic/p-doped Heterojunction
dc.subjectOrganic Tmd Heterostructure
dc.titleElectronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Nano
dc.eprint.versionPost-print
dc.contributor.institutionInstitute of Materials Research & Engineering (IMRE), A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, Innovis, Singapore 138634.
dc.contributor.institutionInstitut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin , Brook-Taylor Straße 6, 12489 Berlin, Germany.
dc.contributor.institutionSZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University , Shenzhen 518060, China.
dc.contributor.institutionDepartment of Physics, National University of Singapore , 2 Science Drive 3, Singapore 117542.
dc.contributor.institutionDepartment of Chemistry, National University of Singapore , 2 Science Drive 3, Singapore 117542.
dc.contributor.institutionCentre for Advanced 2D Materials, National University of Singapore , Block S14, Level 6, 6 Science Drive 2, Singapore 117546.
kaust.personLi, Ming-yang
kaust.personLi, Lain-Jong
dc.date.published-online2017-08-03
dc.date.published-print2017-09-26


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