• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguideTheses and Dissertations LibguideSubmit an Item

    Statistics

    Display statistics

    Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    acsnano.7b03953.pdf
    Size:
    1.481Mb
    Format:
    PDF
    Description:
    Accepted Manuscript
    Download
    Type
    Article
    Authors
    Song, Zhibo
    Schultz, Thorsten
    Ding, Zijing
    Lei, Bo
    Han, Cheng
    Amsalem, Patrick
    Lin, Tingting
    Chi, Dongzhi
    Wong, Swee Liang
    Zheng, Yu Jie
    Li, Ming-yang cc
    Li, Lain-Jong cc
    Chen, Wei
    Koch, Norbert
    Huang, Yu Li
    Wee, Andrew Thye Shen
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2017-08-03
    Online Publication Date
    2017-08-03
    Print Publication Date
    2017-09-26
    Permanent link to this record
    http://hdl.handle.net/10754/625708
    
    Metadata
    Show full item record
    Abstract
    Two-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe2), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe2. At the 1D border between the doped and undoped SL-WSe2 regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe2. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.
    Citation
    Song Z, Schultz T, Ding Z, Lei B, Han C, et al. (2017) Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor. ACS Nano 11: 9128–9135. Available: http://dx.doi.org/10.1021/acsnano.7b03953.
    Sponsors
    A.T.S.W. acknowledges financial support from MOE AcRF Tier 1 Grant Number R-144-000-321-112 and the Graphene Research Centre. Y.L.H. and D.C. acknowledge the A-STAR SERC grant support for the 2D growth project under the 2D pharos program (SERC 1527000012). Work in Berlin was supported by the DFG (SFB951 and AM419/1-1). Calculations were performed on the Graphene Research Centre cluster supported by Prof. Su Ying Quek.
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Nano
    DOI
    10.1021/acsnano.7b03953
    PubMed ID
    28753270
    Additional Links
    http://pubs.acs.org/doi/abs/10.1021/acsnano.7b03953
    http://pubs.acs.org/doi/abs/10.1021/acsnano.7b03953
    ae974a485f413a2113503eed53cd6c53
    10.1021/acsnano.7b03953
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

    entitlement

    Related articles

    • Band Alignment at GaN/Single-Layer WSe<sub>2</sub> Interface.
    • Authors: Tangi M, Mishra P, Tseng CC, Ng TK, Hedhili MN, Anjum DH, Alias MS, Wei N, Li LJ, Ooi BS
    • Issue date: 2017 Mar 15
    • Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides.
    • Authors: Zhang K, Jariwala B, Li J, Briggs NC, Wang B, Ruzmetov D, Burke RA, Lerach JO, Ivanov TG, Haque M, Feenstra RM, Robinson JA
    • Issue date: 2017 Dec 21
    • Electronic Tuning in WSe<sub>2</sub>/Au via van der Waals Interface Twisting and Intercalation.
    • Authors: Wu Q, Bagheri Tagani M, Zhang L, Wang J, Xia Y, Zhang L, Xie SY, Tian Y, Yin LJ, Zhang W, Rudenko AN, Wee ATS, Wong PKJ, Qin Z
    • Issue date: 2022 Mar 14
    • Local Electronic Properties of Coherent Single-Layer WS<sub>2</sub>/WSe<sub>2</sub> Lateral Heterostructures.
    • Authors: Herbig C, Zhang C, Mujid F, Xie S, Pedramrazi Z, Park J, Crommie MF
    • Issue date: 2021 Mar 24
    • Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.
    • Authors: Lin YC, Chang CY, Ghosh RK, Li J, Zhu H, Addou R, Diaconescu B, Ohta T, Peng X, Lu N, Kim MJ, Robinson JT, Wallace RM, Mayer TS, Datta S, Li LJ, Robinson JA
    • Issue date: 2014 Dec 10
    DSpace software copyright © 2002-2022  DuraSpace
    Quick Guide | Contact Us | KAUST University Library
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.