Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor
Type
ArticleAuthors
Song, ZhiboSchultz, Thorsten
Ding, Zijing
Lei, Bo
Han, Cheng
Amsalem, Patrick
Lin, Tingting
Chi, Dongzhi
Wong, Swee Liang
Zheng, Yu Jie
Li, Ming-yang

Li, Lain-Jong

Chen, Wei
Koch, Norbert
Huang, Yu Li
Wee, Andrew Thye Shen
KAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2017-08-03Online Publication Date
2017-08-03Print Publication Date
2017-09-26Permanent link to this record
http://hdl.handle.net/10754/625708
Metadata
Show full item recordAbstract
Two-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe2), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe2. At the 1D border between the doped and undoped SL-WSe2 regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe2. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.Citation
Song Z, Schultz T, Ding Z, Lei B, Han C, et al. (2017) Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor. ACS Nano 11: 9128–9135. Available: http://dx.doi.org/10.1021/acsnano.7b03953.Sponsors
A.T.S.W. acknowledges financial support from MOE AcRF Tier 1 Grant Number R-144-000-321-112 and the Graphene Research Centre. Y.L.H. and D.C. acknowledge the A-STAR SERC grant support for the 2D growth project under the 2D pharos program (SERC 1527000012). Work in Berlin was supported by the DFG (SFB951 and AM419/1-1). Calculations were performed on the Graphene Research Centre cluster supported by Prof. Su Ying Quek.Publisher
American Chemical Society (ACS)Journal
ACS NanoPubMed ID
28753270Additional Links
http://pubs.acs.org/doi/abs/10.1021/acsnano.7b03953http://pubs.acs.org/doi/abs/10.1021/acsnano.7b03953
ae974a485f413a2113503eed53cd6c53
10.1021/acsnano.7b03953
Scopus Count
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