Show simple item record

dc.contributor.authorLi, Henan
dc.contributor.authorLi, Ying
dc.contributor.authorAljarb, Areej
dc.contributor.authorShi, Yumeng
dc.contributor.authorLi, Lain-Jong
dc.date.accessioned2017-10-03T12:49:32Z
dc.date.available2017-10-03T12:49:32Z
dc.date.issued2017-07-06
dc.identifier.citationLi H, Li Y, Aljarb A, Shi Y, Li L-J (2017) Epitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability. Chemical Reviews. Available: http://dx.doi.org/10.1021/acs.chemrev.7b00212.
dc.identifier.issn0009-2665
dc.identifier.issn1520-6890
dc.identifier.pmid28682055
dc.identifier.doi10.1021/acs.chemrev.7b00212
dc.identifier.urihttp://hdl.handle.net/10754/625664
dc.description.abstractRecently there have been many research breakthroughs in two-dimensional (2D) materials including graphene, boron nitride (h-BN), black phosphors (BPs), and transition-metal dichalcogenides (TMDCs). The unique electrical, optical, and thermal properties in 2D materials are associated with their strictly defined low dimensionalities. These materials provide a wide range of basic building blocks for next-generation electronics. The chemical vapor deposition (CVD) technique has shown great promise to generate high-quality TMDC layers with scalable size, controllable thickness, and excellent electronic properties suitable for both technological applications and fundamental sciences. The capability to precisely engineer 2D materials by chemical approaches has also given rise to fascinating new physics, which could lead to exciting new applications. In this Review, we introduce the latest development of TMDC synthesis by CVD approaches and provide further insight for the controllable and reliable synthesis of atomically thin TMDCs. Understanding of the vapor-phase growth mechanism of 2D TMDCs could benefit the formation of complicated heterostructures and novel artificial 2D lattices.
dc.description.sponsorshipThis work was supported by National Natural Science Foundation of China (Grant no. 51602200), Educational Commission of Guangdong Province (Grant no. 2016KZDXM008), Natural Science Foundation of SZU (Grant no. 2017011), and King Abdullah University of Science and Technology, Saudi Arabia. This work was partially supported by the Science and Technology Planning Project of Guangdong Province (Grant no. 2016B050501005), the Educational Commission of Guangdong Province (Grant no. 2016KCXTD006), and Shenzhen Peacock Plan (Grant no. KQTD2016053112042971).
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.chemrev.7b00212
dc.titleEpitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability
dc.typeArticle
dc.contributor.departmentKAUST Catalysis Center (KCC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalChemical Reviews
dc.contributor.institutionCollege of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, China
dc.contributor.institutionSZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
kaust.personAljarb, Areej
kaust.personLi, Lain-Jong
dc.date.published-online2017-07-06
dc.date.published-print2018-07-11


This item appears in the following Collection(s)

Show simple item record