Show simple item record

dc.contributor.authorTsai, Meng-Lin
dc.contributor.authorLi, Ming-yang
dc.contributor.authorDuran Retamal, Jose Ramon
dc.contributor.authorLam, Kai-Tak
dc.contributor.authorLin, Yung-Chang
dc.contributor.authorSuenaga, Kazu
dc.contributor.authorChen, Lih-Juann
dc.contributor.authorLiang, Gengchiau
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorHe, Jr-Hau
dc.date.accessioned2017-10-03T12:49:31Z
dc.date.available2017-10-03T12:49:31Z
dc.date.issued2017-06-26
dc.identifier.citationTsai M-L, Li M-Y, Retamal JRD, Lam K-T, Lin Y-C, et al. (2017) Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency. Advanced Materials 29: 1701168. Available: http://dx.doi.org/10.1002/adma.201701168.
dc.identifier.issn0935-9648
dc.identifier.pmid28650580
dc.identifier.doi10.1002/adma.201701168
dc.identifier.urihttp://hdl.handle.net/10754/625641
dc.description.abstractThe recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe-MoS lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. These robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics.
dc.description.sponsorshipThis research was supported by KAUST baseline funding.
dc.publisherWiley
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adma.201701168/full
dc.rightsArchived with thanks to Wiley
dc.subject2D materials
dc.subjectLateral heterostructures
dc.subjectMonolayer
dc.subjectSolar cells
dc.subjectTransition metal dichalcogenides
dc.titleSingle Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNano Energy Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Materials
dc.rights.embargodate2018-06-26
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Materials Science and Engineering; National Tsing Hua University; Hsinchu 30013 Taiwan Republic of China
dc.contributor.institutionDepartment of Electrical and Computer Engineering; National University of Singapore; Singapore 117576 Singapore
dc.contributor.institutionNational Institute of Advanced Industrial Science and Technology (AIST); AIST Central 5 Tsukuba 305-8565 Japan
kaust.personTsai, Meng-Lin
kaust.personLi, Ming-yang
kaust.personDuran Retamal, Jose Ramon
kaust.personLi, Lain-Jong
kaust.personHe, Jr-Hau
refterms.dateFOA2020-01-23T07:01:02Z
dc.date.published-online2017-06-26
dc.date.published-print2017-08


Files in this item

Thumbnail
Name:
qt04j6x6n91.pdf
Size:
260.2Kb
Format:
PDF
Description:
Accepted manuscript

This item appears in the following Collection(s)

Show simple item record