Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency
Duran Retamal, Jose Ramon
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Solar Center (KSC)
Material Science and Engineering Program
Nano Energy Lab
Physical Science and Engineering (PSE) Division
Online Publication Date2017-06-26
Print Publication Date2017-08
Embargo End Date2018-06-26
Permanent link to this recordhttp://hdl.handle.net/10754/625641
MetadataShow full item record
AbstractThe recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe-MoS lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. These robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics.
CitationTsai M-L, Li M-Y, Retamal JRD, Lam K-T, Lin Y-C, et al. (2017) Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency. Advanced Materials 29: 1701168. Available: http://dx.doi.org/10.1002/adma.201701168.
SponsorsThis research was supported by KAUST baseline funding.