Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design
Ajia, Idris A.
Roqan, Iman S.
Feng, Zhe Chuan
KAUST DepartmentAdvanced Semiconductor Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Imaging and Characterization Core Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
KAUST Grant NumberBAS/1/1664/01-01
Permanent link to this recordhttp://hdl.handle.net/10754/625582
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AbstractSignificant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.
CitationWu F, Sun H, AJia IA, Roqan IS, Zhang D, et al. (2017) Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design. Journal of Physics D: Applied Physics 50: 245101. Available: http://dx.doi.org/10.1088/1361-6463/aa70dd.
SponsorsThis work was supported by KAUST Startup and Baseline Funds (Grant No. BAS/1/1664/01-01); National Key R&D Program of China (Grant No. 2016YFB0400901, 2016YFB0400804); National Basic Research Program of China (Grant No. 2012CB619302); Key Laboratory of infrared imaging materials and detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Grant No. IIMDKFJJ-15-07); National Natural Science Foundation of China (Grant No. 61675079, 11574166, 61377034), and the Director Fund of WNLO.