High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Physical Sciences and Engineering (PSE) Division
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AbstractElectrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.
CitationTsai M-L, Li M-Y, Shi Y, Chen L-J, Li L-J, et al. (2017) High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions. Nanoscale Horiz 2: 37–42. Available: http://dx.doi.org/10.1039/c6nh00075d.
PublisherRoyal Society of Chemistry (RSC)