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dc.contributor.authorMohammed, Hanan
dc.contributor.authorCorte-Leon, H.
dc.contributor.authorIvanov, Yurii P.
dc.contributor.authorMoreno Garcia, Julian
dc.contributor.authorKazakova, O.
dc.contributor.authorKosel, Jürgen
dc.date.accessioned2017-10-02T10:53:15Z
dc.date.available2017-10-02T10:53:15Z
dc.date.issued2017-06-22
dc.identifier.citationMohammed H, Corte-Leon H, Ivanov YP, Moreno JA, Kazakova O, et al. (2017) Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments. IEEE Transactions on Magnetics: 1–1. Available: http://dx.doi.org/10.1109/TMAG.2017.2718623.
dc.identifier.issn0018-9464
dc.identifier.issn1941-0069
dc.identifier.doi10.1109/TMAG.2017.2718623
dc.identifier.urihttp://hdl.handle.net/10754/625529
dc.description.abstractMagnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.
dc.description.sponsorshipThis work was funded partly by King Abdullah University of Science and Technology and in part by EMRP and EMRP participating countries under Project EXL04 (SpinCal), and FP7 project NanoMag, and NanoMag (EMPIR).
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/document/7954991/
dc.rights(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.subjectAngular Magnetoresistance
dc.subjectCylindrical Nanowires
dc.subjectDomain Wall Pinning
dc.subjectMagnetic field measurement
dc.subjectMagnetic fields
dc.subjectMagnetic Force Microscopy
dc.subjectMagnetization reversal
dc.subjectNanowires
dc.subjectNickel
dc.subjectResistance
dc.subjectSwitches
dc.titleAngular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMaterials Science and Engineering Program
dc.identifier.journalIEEE Transactions on Magnetics
dc.eprint.versionPost-print
dc.contributor.institutionNational Physical Laboratory, London, United Kingdom.
dc.contributor.institutionSchool of Natural Sciences, Far Eastern Federal University, Vladivostok, Russia.
dc.contributor.institutionAustrian Academy of Sciences, Erich Schmid Institute of Materials Science, Leoben , Austria
kaust.personMohammed, Hanan
kaust.personIvanov, Yurii P.
kaust.personMoreno Garcia, Julian Alberto
kaust.personKosel, Jürgen
refterms.dateFOA2018-06-13T20:14:13Z


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