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dc.contributor.authorTangi, Malleswararao
dc.contributor.authorShakfa, Mohammad Khaled
dc.contributor.authorMishra, Pawan
dc.contributor.authorLi, Ming-yang
dc.contributor.authorChiu, Ming-Hui
dc.contributor.authorNg, Tien Khee
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2017-09-27T05:50:09Z
dc.date.available2017-09-27T05:50:09Z
dc.date.issued2017-09-22
dc.identifier.citationTangi M, Shakfa MK, Mishra P, Li M-Y, Chiu M-H, et al. (2017) Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2. Optical Materials Express 7: 3697. Available: http://dx.doi.org/10.1364/OME.7.003697.
dc.identifier.issn2159-3930
dc.identifier.doi10.1364/OME.7.003697
dc.identifier.urihttp://hdl.handle.net/10754/625508
dc.description.abstractWe report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.
dc.description.sponsorshipKing Abdulaziz City for Science and Technology (KACST); King Abdullah University of Science and Technology (KAUST) (KACST TIC R2-FP-008 and BAS/1/1614-01-01).
dc.publisherThe Optical Society
dc.relation.urlhttps://www.osapublishing.org/ome/abstract.cfm?uri=ome-7-10-3697
dc.rights© 2017 Optical Society of America]. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.
dc.titleAnomalous photoluminescence thermal quenching of sandwiched single layer MoS_2
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalOptical Materials Express
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taipei, 10617, Taiwan
kaust.personTangi, Malleswararao
kaust.personShakfa, Mohammad Khaled
kaust.personMishra, Pawan
kaust.personChiu, Ming-Hui
kaust.personNg, Tien Khee
kaust.personLi, Lain-Jong
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
refterms.dateFOA2018-06-14T05:05:34Z


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