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dc.contributor.authorMumthaz Muhammed, Mufasila
dc.contributor.authorAlwadai, Norah M.
dc.contributor.authorLopatin, Sergei
dc.contributor.authorKuramata, Akito
dc.contributor.authorRoqan, Iman S.
dc.date.accessioned2017-09-21T09:25:34Z
dc.date.available2017-09-21T09:25:34Z
dc.date.issued2017-09-11
dc.identifier.citationMuhammed M, Alwadai N, Lopatin S, Kuramata A, Roqan IS (2017) High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.7b09584.
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.pmid28892352
dc.identifier.doi10.1021/acsami.7b09584
dc.identifier.urihttp://hdl.handle.net/10754/625495
dc.description.abstractWe demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.
dc.description.sponsorshipThe authors thank KAUST for the financial support.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsami.7b09584
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsami.7b09584.
dc.titleHigh-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate
dc.typeArticle
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.identifier.journalACS Applied Materials & Interfaces
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionTamura Corporation and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan
kaust.personMumthaz Muhammed, Mufasila
kaust.personAlwadai, Norah Mohammed Mosfer
kaust.personLopatin, Sergei
kaust.personRoqan, Iman S.


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