Efficiency enhancement of InGaN amber MQWs using nanopillar structures
Petersen, Paul Michael
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/625476
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AbstractWe have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.
CitationOu Y, Iida D, Liu J, Wu K, Ohkawa K, et al. (2017) Efficiency enhancement of InGaN amber MQWs using nanopillar structures. Nanophotonics 0. Available: http://dx.doi.org/10.1515/nanoph-2017-0057.
SponsorsThis work was supported by the Innovation Fund Denmark (project no. 4106-00018B). KW and AB acknowledge support from the Danish National Research Foundation and Villum Foundation’s Center for Intelligent Drug Delivery and Sensing Using Microcontainers and Nanomechanics (IDUN).
PublisherWalter de Gruyter GmbH
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