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dc.contributor.authorZhang, Xuan
dc.contributor.authorZheng, Xiujun
dc.contributor.authorZhang, Hong
dc.contributor.authorZhang, Junli
dc.contributor.authorFu, Jiecai
dc.contributor.authorZhang, Qiang
dc.contributor.authorPeng, Chaoyi
dc.contributor.authorBai, Feiming
dc.contributor.authorZhang, Xixiang
dc.contributor.authorPeng, Yong
dc.date.accessioned2017-08-17T06:37:53Z
dc.date.available2017-08-17T06:37:53Z
dc.date.issued2017
dc.identifier.citationZhang X, Zheng X, Zhang H, Zhang J, Fu J, et al. (2017) Bottom-up nanoarchitecture of semiconductor nano-building blocks by controllable in situ SEM-FIB thermal soldering method. J Mater Chem C. Available: http://dx.doi.org/10.1039/c7tc01668a.
dc.identifier.issn2050-7526
dc.identifier.issn2050-7534
dc.identifier.doi10.1039/c7tc01668a
dc.identifier.urihttp://hdl.handle.net/10754/625352
dc.description.abstractHere we demonstrate that the building blocks of semiconductor WO3 nanowires can be controllably soldered together by a novel nano-soldering technique of in situ SEM-FIB thermal soldering, in which the soldering temperature can precisely remain in an optimal range to avoid a strong thermal diffusion.
dc.description.sponsorshipThis work was supported by National Natural Science Foundation of China (51571104 and 11274145), MOST International Cooperation Funds (2014DFA91340), Program for Changjiang Scholars and Innovative Research Team in the University (Grant No. IRT1251).
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2017/TC/C7TC01668A#!divAbstract
dc.rightsArchived with thanks to J. Mater. Chem. C
dc.titleBottom-up nanoarchitecture of semiconductor nano-building blocks by controllable in situ SEM-FIB thermal soldering method
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentThin Films & Characterization
dc.identifier.journalJ. Mater. Chem. C
dc.eprint.versionPost-print
dc.contributor.institutionKey Laboratory of Magnetism and Magnetic Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, Gansu
dc.contributor.institutionState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, P. R. China
kaust.personZhang, Qiang
kaust.personZhang, Xixiang
refterms.dateFOA2018-08-10T00:00:00Z


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